Crystal growth of cubic boron nitride by temperature difference method at ∼55 kbar and ∼1800 °C

1987 ◽  
Vol 61 (8) ◽  
pp. 2822-2825 ◽  
Author(s):  
O. Mishima ◽  
S. Yamaoka ◽  
O. Fukunaga
Keyword(s):  
Crystal Growth ◽  
Boron Nitride ◽  
Temperature Difference ◽  
Difference Method ◽  
Cubic Boron Nitride

Crystal growth of cubic boron nitride using Li3BN2 solvent under high temperature and pressure

1989 ◽  
Vol 94 (1) ◽  
pp. 261-269 ◽  
Author(s):  
Makoto Kagamida ◽  
Hisao Kanda ◽  
Minoru Akaishi ◽  
Akihiro Nukui ◽  
Toshikazu Osawa ◽  
...  
Keyword(s):  
Crystal Growth ◽  
High Temperature ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
High Temperature And Pressure ◽  
Temperature And Pressure

scholarly journals Some Factors Affecting Crystal Growth of Cubic Boron Nitride

1966 ◽  
Vol 69 (3) ◽  
pp. 365-369 ◽  
Author(s):  
Katsuya KUDAKA ◽  
Hiroshi KONNO ◽  
Toshio MATOBA
Keyword(s):  
Crystal Growth ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Factors Affecting

Crystal Growth of α-HgI2 by the Temperature Difference Method for High Sensitivity X-ray Detection

2015 ◽  
Vol 15 (7) ◽  
pp. 3383-3387 ◽  
Author(s):  
Zhaojun Zhang ◽  
Wei Zheng ◽  
Anqi Chen ◽  
Kai Ding ◽  
Feng Huang
Keyword(s):  
Crystal Growth ◽  
Temperature Difference ◽  
Difference Method ◽  
High Sensitivity ◽  
X Ray

Investigation of Solution Growth of SiC by Temperature Difference Method Using Fe-Si Solvent

2013 ◽  
Vol 740-742 ◽  
pp. 31-34 ◽  
Author(s):  
Takeshi Yoshikawa ◽  
Sakiko Kawanishi ◽  
Kazuki Morita ◽  
Toshihiro Tanaka
Keyword(s):  
Mass Transfer ◽  
Growth Rate ◽  
Raman Spectroscopy ◽  
Crystal Growth ◽  
Natural Convection ◽  
Temperature Difference ◽  
Difference Method ◽  
Solution Growth ◽  
Resistance Heating ◽  
Convective Mass Transfer

This paper describes the solution growth of SiC by a temperature difference method using an Fe-Si solvent. Crystal growth of SiC from an Fe-40 mol%Si solvent onto a seed wafer of 6H-SiC or 4H-SiC was carried out at 1623 – 1723 K under induction heating. Homo-epitaxial growth on both 6H-SiC and 4H-SiC was identified by Raman spectroscopy, and the SiC growth rate was found to be 90 – 260 μm/h. Experiments were also conducted under resistance heating at 1623 K using conditions which suppressed natural convection. Convective mass transfer in the solution was found to be important for rapid growth of SiC.

Wurtzite Boron Nitride Crystal Growth in the Region of Cubic Boron Nitride Crystal Synthesizing

1998 ◽  
Vol 15 (1) ◽  
pp. 70-71 ◽  
Author(s):  
Tie-chen Zhang ◽  
San Yu ◽  
Dong-mei Li ◽  
Wei-li Guo ◽  
Chun-xiao Gao ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Boron Nitride ◽  
Cubic Boron Nitride

CuBr Crystal Growth in Ethylene Glycol Solvent by the Temperature-Difference Method

2004 ◽  
Vol 4 (3) ◽  
pp. 413-414 ◽  
Author(s):  
Songming Wan ◽  
Fan Guo ◽  
Yuangqing Zhang ◽  
Weiwei Zheng ◽  
Yuanguang Zhang ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Ethylene Glycol ◽  
Temperature Difference ◽  
Difference Method

Structural relationships in the synthesis of cubic boron nitride thin films by ion-assisted deposition

1994 ◽  
Vol 52 ◽  
pp. 638-639
Author(s):  
D. L. Medlin ◽  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
M. J. Mills ◽  
K. F. McCarty
Keyword(s):  
Boron Nitride ◽  
Ion Irradiation ◽  
Cubic Boron Nitride ◽  
Film Stress ◽  
Bonded Phases ◽  
Structural Relationships ◽  
Precursor Material ◽  
Pressure Synthesis ◽  
Microstructure Of The Material

The allotropes of boron nitride include two sp2-bonded phases with hexagonal and rhombohedral structures (hBN and rBN) and two sp3-bonded phases with cubic (zincblende) and hexagonal (wurtzitic) structures (cBN and wBN) (Fig. 1). Although cBN is synthesized in bulk form by conversion of hBN at high temperatures and pressures, low-pressure synthesis of cBN as a thin film is more difficult and succeeds only when the growing film is simultaneously irradiated with a high flux of ions. Only sp2-bonded material, which generally has a disordered, turbostratic microstructure (tBN), will form in the absence of ion-irradiation. The mechanistic role of the irradiation is not well understood, but recent work suggests that ion-induced compressive film stress may induce the transformation to cBN.Typically, BN films are deposited at temperatures less than 1000°C, a regime for which the structure of the sp2-bonded precursor material dictates the phase and microstructure of the material that forms from conventional (bulk) high pressure treatment.

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