CuBr Crystal Growth in Ethylene Glycol Solvent by the Temperature-Difference Method

2004 ◽  
Vol 4 (3) ◽  
pp. 413-414 ◽  
Author(s):  
Songming Wan ◽  
Fan Guo ◽  
Yuangqing Zhang ◽  
Weiwei Zheng ◽  
Yuanguang Zhang ◽  
...  
2015 ◽  
Vol 15 (7) ◽  
pp. 3383-3387 ◽  
Author(s):  
Zhaojun Zhang ◽  
Wei Zheng ◽  
Anqi Chen ◽  
Kai Ding ◽  
Feng Huang

2013 ◽  
Vol 740-742 ◽  
pp. 31-34 ◽  
Author(s):  
Takeshi Yoshikawa ◽  
Sakiko Kawanishi ◽  
Kazuki Morita ◽  
Toshihiro Tanaka

This paper describes the solution growth of SiC by a temperature difference method using an Fe-Si solvent. Crystal growth of SiC from an Fe-40 mol%Si solvent onto a seed wafer of 6H-SiC or 4H-SiC was carried out at 1623 – 1723 K under induction heating. Homo-epitaxial growth on both 6H-SiC and 4H-SiC was identified by Raman spectroscopy, and the SiC growth rate was found to be 90 – 260 μm/h. Experiments were also conducted under resistance heating at 1623 K using conditions which suppressed natural convection. Convective mass transfer in the solution was found to be important for rapid growth of SiC.


ChemPhysChem ◽  
2012 ◽  
Vol 13 (8) ◽  
pp. 2115-2118 ◽  
Author(s):  
Min Guan ◽  
Wen Guo ◽  
Lianhua Gao ◽  
Yuzhao Tang ◽  
Jun Hu ◽  
...  

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