Electrical characterization of Schottky contacts of Au, Al, Gd, and Pt onn‐type andp‐type GaAs

1987 ◽  
Vol 61 (8) ◽  
pp. 2955-2961 ◽  
Author(s):  
T. Okumura ◽  
K. N. Tu
Keyword(s):  
Electrical Characterization ◽  
Schottky Contacts

Effect of the inversion layer on the electrical characterization of Pt germanide/n-Ge(001) Schottky contacts

2006 ◽  
Vol 89 (24) ◽  
pp. 242117 ◽  
Author(s):  
H. B. Yao ◽  
D. Z. Chi ◽  
R. Li ◽  
S. J. Lee ◽  
D.-L. Kwong
Keyword(s):  
Inversion Layer ◽  
Electrical Characterization ◽  
Schottky Contacts

Electrical characterization of Schottky contacts to N-polar GaN

2013 ◽  
Vol 86 ◽  
pp. 17-21 ◽  
Author(s):  
B.P. Downey ◽  
D.J. Meyer ◽  
D.S. Katzer ◽  
D.F. Storm ◽  
S.C. Binari
Keyword(s):  
Electrical Characterization ◽  
Schottky Contacts

Electrical characterization of n -GaN epilayers using transparent polyaniline Schottky contacts

2010 ◽  
Vol 7 (7-8) ◽  
pp. 2007-2009 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Nobuyuki Matsuki ◽  
Yoshihiro Irokawa ◽  
Masatomo Sumiya
Keyword(s):  
Electrical Characterization ◽  
Schottky Contacts

Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts

2006 ◽  
Vol 504 (1-2) ◽  
pp. 149-152 ◽  
Author(s):  
L.J. Jin ◽  
K.L. Pey ◽  
W.K. Choi ◽  
D.A. Antoniadis ◽  
E.A. Fitzgerald ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Schottky Contacts

Electrical Characterization of Defects Introduced During Sputter Deposition of Schottky Contacts on n-type Ge

2007 ◽  
Vol 36 (12) ◽  
pp. 1604-1607 ◽  
Author(s):  
F.D. Auret ◽  
S. Coelho ◽  
W.E. Meyer ◽  
C. Nyamhere ◽  
M. Hayes ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Schottky Contacts ◽  
Sputter Deposition

Physical and Electrical Characterization of WN Schottky Contacts on 4H-SiC

1998 ◽  
Vol 264-268 ◽  
pp. 817-820 ◽  
Author(s):  
Olivier Noblanc ◽  
C. Arnodof ◽  
S. Cassette ◽  
Christian Brylinski ◽  
A. Kakanakova-Georgieva ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Schottky Contacts

Electrical Characterization of Defects in GaAs Grown on Si by MBE

1987 ◽  
Vol 91 ◽  
Author(s):  
N. Chand ◽  
R. Fischer ◽  
A. M. Sergent ◽  
D. V. Lang ◽  
A. Y. Cho
Keyword(s):  
Leakage Current ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Electrical Characterization ◽  
Schottky Contacts ◽  
Internal Heating ◽  
Carrier Generation ◽  
Gaas On Si ◽  
Large Current

ABSTRACTWe show that MBE-grown GaAs on Si exhibits only a modest increase in the concentrations of the well-known electron traps typical of MBE-GaAs with no evidence for any new electron deep levels in the upper half of the bandgap in spite of the dislocations and other defects in the material. As shown by Au-GaAs Schottky contacts, the defects are unnoticeable when the device is forward biased but become very active in reverse biased condition, causing large leakage current and low breakdown voltage (although the device is still acceptable for many applications, especially FET's). The defects become more active after hydrogenation and more inactive after a post-growth rapid thermal annealing (RTA). Performance of devices made on thermally annealed GaAs on Si is comparable to those of GaAs on GaAs. Also, following the application of a large- current the device behavior improves, indicating a self-annealing action as a result of internal heating. The reverse current in the as-grown material shows a very weak temperature dependence, indicating its origin is not thermionic emission or carrier generation. It is speculated that a large part of the leakage current in the as-grown GaAs on Si is due to the defect assisted tunneling. After RTA, the average spacing between defect clusters increases, thus reducing the tunneling probability and tremendously improving the device characteristics.

Sign in / Sign up

Export Citation Format

Share Document