Computer simulation of high‐resolution transmission electron microscope images based on ball‐and‐spoke models of (100) Si/SiO2interface

1986 ◽  
Vol 60 (11) ◽  
pp. 3900-3904 ◽  
Author(s):  
Iwao Ohdomari ◽  
Tohru Mihara ◽  
Kazuhiko Kai
2000 ◽  
Vol 618 ◽  
Author(s):  
X. J. Guo ◽  
C.-Y. Wen ◽  
J. H. Huang ◽  
H. C. Shih

ABSTRACTWe proposed a concise and novel scheme to determine the crystallographic misorientation of heteroepitaxial structures. In addition to subtle high-resolution transmission electron microscope images, the information revealed from selected-area diffraction patterns at the interfaces offers another path to determine the angles of misorientations. The principle is to extract the basically three-dimensional misorientation information from a two-dimensional selected-area diffraction pattern through the employment of the Laue circle


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