Charged defect states at silicon grain boundaries

1986 ◽  
Vol 60 (11) ◽  
pp. 3910-3915 ◽  
Author(s):  
F. J. Stützler ◽  
H. J. Queisser
Keyword(s):  
Grain Boundaries ◽  
Charged Defect ◽  
Defect States

Charged Defect States at Silicon Grain Boundaries

1986 ◽  
Vol 10-12 ◽  
pp. 229-234 ◽  
Author(s):  
F.J. Stützler ◽  
L. Tapfer ◽  
H.J. Queisser
Keyword(s):  
Grain Boundaries ◽  
Charged Defect ◽  
Defect States

Charged defect states in intrinsic hydrogenated amorphous silicon films

1994 ◽  
Vol 76 (4) ◽  
pp. 2260-2263 ◽  
Author(s):  
Mehmet Güneş ◽  
Christopher R. Wronski ◽  
T. J. McMahon
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Charged Defect ◽  
Defect States ◽  
Hydrogenated Amorphous

Direct Measurement of Electron Emission from Defect States at Silicon Grain Boundaries

1980 ◽  
Vol 44 (20) ◽  
pp. 1365-1365
Author(s):  
C. H. Seager ◽  
G. E. Pike ◽  
D. S. Ginley
Keyword(s):  
Grain Boundaries ◽  
Direct Measurement ◽  
Electron Emission ◽  
Defect States

Estimation of density of charged defect states in some glasses of SeTeSnPb system using low-temperature d.c. conductivity measurements

2021 ◽  
Vol 32 (7) ◽  
pp. 9509-9516
Author(s):  
Shobhit Saraswat ◽  
V. K. Tomar ◽  
V. K. Deolia ◽  
A. Sharma ◽  
A. Dahshan ◽  
...  
Keyword(s):  
Low Temperature ◽  
Charged Defect ◽  
Conductivity Measurements ◽  
Defect States

Distribution of bromine in mixed iodide–bromide organolead perovskites and its impact on photovoltaic performance

2016 ◽  
Vol 4 (41) ◽  
pp. 16191-16197 ◽  
Author(s):  
Yang Zhou ◽  
Feng Wang ◽  
Hong-Hua Fang ◽  
Maria Antonietta Loi ◽  
Fang-Yan Xie ◽  
...  
Keyword(s):  
Solar Cells ◽  
Grain Boundaries ◽  
Photovoltaic Performance ◽  
Perovskite Solar Cells ◽  
Defect States ◽  
Halide Perovskite

The bromine has the role of passivating defect states at grain boundaries and interfaces in mixed halide perovskite solar cells.

Charged Defect State Distributions Obtained from the Analysis of Photoconductivities in Intrinsic a-Si:H Films

1994 ◽  
Vol 336 ◽  
Author(s):  
Mehmet Güneş ◽  
R. W. Collins ◽  
C. R. Wronski
Keyword(s):  
Charged Defect ◽  
Defect States ◽  
State Distribution ◽  
Spin Resonance ◽  
Neutral Defect ◽  
Gap States ◽  
Hydrogenated Amorphous ◽  
Defect Densities ◽  
Positively Charged ◽  
Spin Densities

ABSTRACTSteady-state photoconductivity, sub-bandgap absorption and electron spin resonance (ESR) Measurements were carried out on annealed and light soaked intrinsic hydrogenated Amorphous silicon (a-Si:H) films. The experimental results were modeled using detailed numerical Model. The defect densities derived from the sub-bandgap absorption in the light soaked films were correlated with the ESR spin densities. Selfconsistent fitting of the data was obtained using a gap state distribution which consists of positively charged defect states above, negatively charged defect states below and neutral defect states at about Midgap. Both the annealed and the light degraded states are modeled using the same distribution of gap states whose densities increase upon light soaking with a slight increase in the ratio of the neutral to charged defect densities. These results on intrinsic a-Si:H are consistent with those of charged defect Models.

Defect Distributions in Doped and Undoped A-SiGe:H Alloys

1998 ◽  
Vol 507 ◽  
Author(s):  
Helmut Stiebig ◽  
Frank Siebke ◽  
Reinhard Carius ◽  
Josef Klomfaβ
Keyword(s):  
Absorption Spectra ◽  
Defect Density ◽  
Charged Defect ◽  
Defect States ◽  
Charge Neutrality ◽  
Photothermal Deflection Spectroscopy ◽  
Neutral Defect ◽  
Related Defect ◽  
Gap States ◽  
Good Agreement

ABSTRACTIn this work, gap states in doped and undoped a-SiGe:H alloys are examined by numerical simulations of sub-bandgap absorption spectra measured by the constant photocurrent method and photothermal deflection spectroscopy. Deconvolution methods, neglecting the condition of charge neutrality, can be used for a rough estimate of the defect density value but not for ob- taining detailed information on the distribution of gap states in undoped samples. Our numerical analysis uses adapted occupation statistics and takes into account the condition of charge neutrality. Good agreement between measured and simulated PDS and CPM spectra is obtained. For a certain composition, i.e. a certain bandgap, the investigation of doped films yields infor- mation on the density and the position of charged defect states in the bandgap. In addition, the density of neutral defect states can be derived from a comparison of CPM and PDS spectra. The results reveal the coexistence of charged and neutral defects. In doped as well as in undoped films, charged defect states dominate the defect density. In the investigated range of compo- sitions the defect distribution of a-SiGe:H is similar to those found in a-Si:H. The width of the defect distributions does not decrease with decreasing bandgap. No evidence for a different be- havior of Si- and Ge-related defect states can be found in sub-bandgap absorption spectra.

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