Behavior of dopant diffusion in a silicon‐on‐insulator structure formed by high‐dose oxygen implantation

1986 ◽  
Vol 60 (12) ◽  
pp. 4329-4332 ◽  
Author(s):  
P. Fahey ◽  
S. Solmi
Keyword(s):  
Silicon On Insulator ◽  
High Dose ◽  
Dopant Diffusion ◽  
Oxygen Implantation

An Electrical Characterization of Sol Films Using Devices Formed by Oxygen Implant and Rapid Thermal Processing

1987 ◽  
Vol 92 ◽  
Author(s):  
Jim D. Whitfield ◽  
Marie E. Burnham ◽  
Charles J. Varker ◽  
Syd.R. Wilson
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
High Energy ◽  
Thermally Grown Oxide ◽  
Silicon On Insulator ◽  
Wafer Surface ◽  
High Dose ◽  
Active Device ◽  
Insulating Layer ◽  
Oxygen Implantation

The advantages of Silicon-on-Insulator (SO) devices over bulk Silicon devices are well known (speed, radiation hardened, packing density, latch up free CMOS,). In recent years, much effort has been made to form a thin, buried insulating layer just below the active device region. Several approaches are being developed to fabricate such a buried insulating layer. One viable approach is by high dose, high energy oxygen implantation directly into the silicon wafer surface (1-3). With proper implant and annealing conditions, a thin stoichiometric buried oxide with a good crystalline quality silicon overlayer can be formed on which an epitaxial layer can be grown and functional devices and circuits built. As SO1 circuits become market viable, mass production tools and techniques are being developed and evaluated. Of particular interest here is the evaluation of high current oxygen implantation with rapid thermal processing on the electrical characteristics of the oxide-silicon interfaces, the silicon overlayer and the thermally grown oxide on the top surface using measurements on gated diodes and guarded capacitors.

Characterization of the silicon‐on‐insulator material formed by high‐dose oxygen implantation using spectroscopic ellipsometry

1987 ◽  
Vol 62 (8) ◽  
pp. 3458-3461 ◽  
Author(s):  
F. Ferrieu ◽  
D. P. Vu ◽  
C. D’Anterroches ◽  
J. C. Oberlin ◽  
S. Maillet ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Silicon On Insulator ◽  
High Dose ◽  
Oxygen Implantation

Silicon-on-insulator structures using high dose oxygen implantation to form buried oxide films

1983 ◽  
Vol 14 (6) ◽  
pp. 88-107 ◽  
Author(s):  
K. Das ◽  
G. Shorthouse ◽  
J. Butcher ◽  
K.V. Anand
Keyword(s):  
Oxide Films ◽  
Silicon On Insulator ◽  
High Dose ◽  
Oxygen Implantation ◽  
Buried Oxide

Oxygen bubble formation and evolution during oxygen implantation and annealing of silicon-on-insulator material

1991 ◽  
Vol 49 ◽  
pp. 864-865
Author(s):  
S J. Krause ◽  
J.D. Lee ◽  
B.L. Chen ◽  
S. Seraphin ◽  
B. Cordts ◽  
...  
Keyword(s):  
Structural Changes ◽  
Bubble Formation ◽  
Silicon Layer ◽  
Surface Region ◽  
Silicon On Insulator ◽  
High Dose ◽  
Oxygen Implantation ◽  
Transmission Electron ◽  
Formation And Evolution ◽  
Radiation Hard

Silicon-on-insulator (SOI) material fabricated by high dose oxygen implantation (SIMOX) is a material increasingly used for higher speed and radiation hard circuits. During implantation a variety of structural changes occur, including the formation of defects, bubbles, precipitates, and the buried oxide layer. The topic of bubble formation and evolution has received only limited study. Sjoreen et al. first reported the presence of spherical, randomly distributed precipitates near the top surface of the silicon layer. El-Ghor et al. further examined these precipitates and proposed that they were cavities filled with oxygen. Maszara confirmed the presence of spheroids filled with oxygen in the silicon top surface region in the 1mA cm-2 as-implanted samples. In this work, transmission electron microscopy (TEM) techniques were used to investigate the effect of implantation conditions on the bubble formation and the effect of subsequent annealing conditions on the evolution of bubbles.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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