High‐quality single‐crystal Nb films and influences of substrates on the epitaxial growth

1986 ◽  
Vol 60 (4) ◽  
pp. 1440-1446 ◽  
Author(s):  
Gin‐ichiro Oya ◽  
Masanori Koishi ◽  
Yasuji Sawada
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
High Quality ◽  
High Quality Single Crystal

Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

2006 ◽  
Vol 527-529 ◽  
pp. 299-302
Author(s):  
Hideki Shimizu ◽  
Yosuke Aoyama
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Crystalline Structure ◽  
Flow Rate ◽  
Silicon Substrates ◽  
High Quality ◽  
Sic Films ◽  
Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

Materials with Dirac Loops: A Potential Solution for Next-generation Electronics

2021 ◽  
Vol 1 ◽  
Keyword(s):  
Electronic Structure ◽  
Single Crystal ◽  
Potential Solution ◽  
Next Generation ◽  
Rhenium Oxide ◽  
High Quality ◽  
High Quality Single Crystal

A high-quality single crystal of rhenium oxide shows significantly large magnetoresistance, potentially originating from a unique electronic structure called “hourglass Dirac chain” protected by the symmetry of the crystal.

Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition

2019 ◽  
Vol 19 (4) ◽  
pp. 2030-2036 ◽  
Author(s):  
Lawrence Boyu Young ◽  
Chao-Kai Cheng ◽  
Keng-Yung Lin ◽  
Yen-Hsun Lin ◽  
Hsien-Wen Wan ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Single Crystal ◽  
Atomic Layer ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Layer Deposition

Deposition and surface characterization of high quality single crystal GaN layers

1993 ◽  
Vol 73 (6) ◽  
pp. 3108-3110 ◽  
Author(s):  
M. Asif Khan ◽  
J. N. Kuznia ◽  
D. T. Olson ◽  
R. Kaplan
Keyword(s):  
Single Crystal ◽  
Surface Characterization ◽  
High Quality ◽  
High Quality Single Crystal

scholarly journals Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Seunghun Lee ◽  
Ji Young Kim ◽  
Tae-Woo Lee ◽  
Won-Kyung Kim ◽  
Bum-Su Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Single Crystal ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Radio Frequency Sputtering

Large-area high-quality single crystal diamond

MRS Bulletin ◽  
2014 ◽  
Vol 39 (6) ◽  
pp. 504-510 ◽  
Author(s):  
Matthias Schreck ◽  
Jes Asmussen ◽  
Shinichi Shikata ◽  
Jean-Charles Arnault ◽  
Naoji Fujimori
Keyword(s):  
Single Crystal ◽  
Large Area ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Single Crystal Diamond ◽  
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