Current, carrier concentration, Fermi energy, and related properties of binary compound polar semiconductors with nonparabolic energy bands

1986 ◽  
Vol 60 (4) ◽  
pp. 1384-1390 ◽  
Author(s):  
S. Noor Mohammed ◽  
S. T. H. Abidi
Keyword(s):  
Carrier Concentration ◽  
Fermi Energy ◽  
Binary Compound ◽  
Current Carrier ◽  
Energy Bands

Thickness dependence of the current carrier concentration in bismuth films

1976 ◽  
Vol 34 (2) ◽  
pp. 387-389 ◽  
Author(s):  
E.A. Bondar ◽  
V.I. Vatamanyuk ◽  
A.A. Chumak
Keyword(s):  
Carrier Concentration ◽  
Thickness Dependence ◽  
Current Carrier ◽  
Bismuth Films

The Shubnikov – de Haas effect in dilute lead-in-bismuth alloys

1968 ◽  
Vol 46 (21) ◽  
pp. 2413-2423 ◽  
Author(s):  
On-Ting Woo ◽  
R. J. Balcombe
Keyword(s):  
Band Structure ◽  
Fermi Surface ◽  
Carrier Concentration ◽  
Fermi Energy ◽  
Dilute Alloys ◽  
Haas Effect ◽  
Effect Of Alloying

The differential Shubnikov – de Haas effect has been studied in samples of bismuth containing up to 50 parts per million of lead. The results indicate that the only effect of alloying on the band structure of bismuth is to shift the Fermi energy; the sizes of the various pieces of the Fermi surface are changed, but their shapes are not distorted. The ratio of the change in net carrier concentration to the concentration of lead atoms is found to be only 0.4, which is anomalously low, compared with values of about 1.0 found for dilute alloys of other metals in bismuth.

scholarly journals Electronic Thermal Conductivity and Thermoelectric Performance of PbBi4Te7

2020 ◽  
Vol 36 (3) ◽  
Author(s):  
Tran Van Quang
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Bismuth Telluride ◽  
Density Functional ◽  
Binary Compound ◽  
Thermoelectric Performance ◽  
Boltzmann Transport ◽  
Relaxation Time Approximation ◽  
Electronic Thermal Conductivity ◽  
Constant Relaxation Time

Bismuth telluride and its related compounds are the state-of-the-art thermoelectric materials operating at room temperature. Bismuth telluride with Pb substituted, PbBi4Te7, has been found to be a new quasi-binary compound with an impressive high power factor. In this work, in the framework of density functional theory, we study the electronic thermal conductivity of the compound by employing the solution of Boltzmann Transport Equation in a constant relaxation-time approximation. The results show that the electronic thermal conductivity drastically increases with the increase of temperature and carrier concentration which have a detrimental effect on the thermoelectric performance. At a particular temperature, the competition between the thermal conductivity, the Seebeck coefficient and the electrical conductivity limits the thermoelectric figure of merit, ZT. The maximum ZT value of about 0.47 occurs at 520 K and at the carrier concentration of 5.0×1019cm-3 for n-type doping. This suggests that to maximize the thermoelectric performance of the compound, the carrier concentration must be carefully controlled and optimized whereas the best operating temperature is around 500 K.

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