Tunnel field effect transistor with increased ON current, low-k spacer and high-k dielectric

2010 ◽  
Vol 96 (12) ◽  
pp. 122104 ◽  
Author(s):  
Costin Anghel ◽  
Prathyusha Chilagani ◽  
Amara Amara ◽  
Andrei Vladimirescu
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High K ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
High K Dielectric ◽  
Low K

scholarly journals Investigation on V2O5 Thin Films for Field Effect Transistor Applications

2021 ◽  
Vol 2021 ◽  
pp. 1-7
Author(s):  
S. K. Suresh Babu ◽  
D. Jackuline Moni ◽  
D. Gracia ◽  
Amsalu Gosu Adigo
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Transfer Characteristic ◽  
Oxide Semiconductor ◽  
High K ◽  
Effect Transistor ◽  
V2o5 Thin Films ◽  
High K Dielectric

V2O5 thin films are analyzed for the substitution of SiO2 to reduce the leakage current in devices when SiO2 becomes ultrathin in submicron technology. Vanadium pentoxide (V2O5) has a high-k dielectric constant of 25 and can be replaced as a gate oxide in the field-effect transistor. V2O5 is deposited using pulsed laser deposition (PLD) in the oxygen (O2) environment at room temperature and characterized. The films surface morphology has been examined by scanning electron microscopy. The capacitance, dielectric constant, and dielectric loss are analyzed for fabricated metal oxide semiconductor (MOS) structure using Solartron SI-1260 impedance analyzer. The transfer characteristic of the fabricated device is analyzed using National Instruments NI-PXI 4110. The ION/IOFF ratio of 106 and threshold voltage (VTH) of 0.6 V is obtained.

Printed High-k Dielectric for Flexible Low-Power Extended Gate Field-Effect Transistor in Sensing Pressure

2019 ◽  
Vol 1 (5) ◽  
pp. 711-717 ◽  
Author(s):  
Qi-Jun Sun ◽  
Tan Li ◽  
Wei Wu ◽  
Shishir Venkatesh ◽  
Xin-Hua Zhao ◽  
...  
Keyword(s):  
Low Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High K ◽  
Effect Transistor ◽  
High K Dielectric
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