Comprehensive study of AuMnp‐type ohmic contact for GaAs/GaAlAs heterojunction bipolar transistors

1986 ◽  
Vol 59 (11) ◽  
pp. 3783-3786 ◽  
Author(s):  
C. Dubon‐Chevallier ◽  
M. Gauneau ◽  
J. F. Bresse ◽  
A. Izrael ◽  
D. Ankri
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Ohmic Contact ◽  
Bipolar Transistors ◽  
Comprehensive Study

FABRICATION TECHNIQUES FOR SELF-ALIGNED GaAs-BASED HBTs AND SUBMICRON GATE LENGTH FETs

1994 ◽  
Vol 08 (16) ◽  
pp. 2221-2243
Author(s):  
F. REN
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Ohmic Contact ◽  
Field Effect Transistors ◽  
Bipolar Transistors ◽  
Device Performance ◽  
Gate Length ◽  
Active Devices ◽  
Etching Selectivity ◽  
Gate Recess ◽  
Wet Etch

Process technologies for self-aligned AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors (HBTs) as well as gate definition and dry etching fabrication schemes for submicron gate length AlGaAs/GaAs-based field effect transistors (FETs) are presented. Multiple energy F + and H + ions were used to isolate the active devices for HBTs. The resistance of test wafers at 200° C showed no change over periods of more than 50 days. Highly selective dry and wet etch techniques for InGaP/GaAs and AlGaAs/GaAs material systems were used to uniformly expose heterojunctions. Reliability of the alloyed ohmic contact and feasibility of the nonalloyed ohmic contact metallizations for both p and n type GaAs layers will be discussed. The reproducible gate recess etching is one of the critical steps for AlGaAs/GaAs-based FETs. The etching selectivity, damage, pre- and post-clean procedures were studied in terms of device performance. A simple low temperature SiN x deposition and an etch-back process with optical stepper were used to demonstrate 0.1 µm Y-shape gate feature.

Ultra-Low Resistance Base Ohmic Contact with Pt/Ti/Pt/Au for High-fmaxAlGaAs/GaAs Heterojunction Bipolar Transistors

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 786-789 ◽  
Author(s):  
Tohru Sugiyama ◽  
Yasuhiko Kuriyama ◽  
Masayuki Asaka ◽  
Norio Iizuka ◽  
Torakichi Kobayashi ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Ohmic Contact ◽  
Bipolar Transistors ◽  
Low Resistance

A study on Au/Ni/Au/Ge/Pd ohmic contact and its application to AlGaAs/GaAs heterojunction bipolar transistors

1997 ◽  
Vol 71 (13) ◽  
pp. 1854-1856 ◽  
Author(s):  
Il-Ho Kim ◽  
Sung Ho Park ◽  
Tae-Woo Lee ◽  
Moon-Pyung Park
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Ohmic Contact ◽  
Bipolar Transistors

Fabrication Techniques for GaAs Based HBTS and FETs

1993 ◽  
Vol 300 ◽  
Author(s):  
F. Ren
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Ohmic Contact ◽  
Field Effect Transistors ◽  
Bipolar Transistors ◽  
Device Performance ◽  
Active Devices ◽  
Material Systems ◽  
Etching Selectivity ◽  
Gate Recess ◽  
Wet Etch

ABSTRACTProcess technologies for self-aligned AlGaAs/GaAs and lnGaP/GaAs heterojunction bipolar transistors (HBTs) as well as dry etching fabrication schemes for submicron AlGaAs/GaAs based field effect transistors (FETs) are presented. Multiple energy F+ and H+ ions were used to isolate the active devices for HBTs. The resistance of test wafers at 200 °C showed no change over periods of 50 days. Highly selective dry and wet etch techniques for InGaP/GaAs and AlGaAs/GaAs material systems were used to uniformly expose junctions. Reliability of the alloyed ohmic contact and feasibility of the non-alloyed ohmic contact metallizations for both p and n type GaAs layers will be discussed. The reproducible gate recess etching is one of the critical steps for AlGaAs/GaAs based FETs. The etching selectivity, damage, pre and post-clean procedure were studied in terms of device performance. A simple low temperature SiNx deposition and an etch-back process with optical stepper were used to demonstrate 0.1 μm Y-shape gate feature.

Comprehensive study of InGaP/AlxGa1 xAs/GaAs heterojunction bipolar transistors with different doping concentrations of AlxGa1 xAs graded layers

2003 ◽  
Vol 19 (3) ◽  
pp. 351-358 ◽  
Author(s):  
Shiou-Ying Cheng ◽  
Jing-Yuh Chen ◽  
Chun-Yuan Chen ◽  
Hung-Ming Chuang ◽  
Chih-Hung Yen ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Graded Layers ◽  
Comprehensive Study

ChemInform Abstract: GeMoW Refractory Ohmic Contact for GaAs/GaAlAs Self-Aligned Heterojunction Bipolar Transistors.

ChemInform ◽  
1990 ◽  
Vol 21 (30) ◽  
Author(s):  
C. DUBON-CHEVALLIER ◽  
P. BLANCONNIER ◽  
C. BESOMBES ◽  
C. MAYEUX ◽  
J. F. BRESSE ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Ohmic Contact ◽  
Bipolar Transistors
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