Magnetic measurements on Pr (BrO3)3 ⋅ 9H2O single crystal and a study of the effects and origin of the crystal field

1986 ◽  
Vol 59 (4) ◽  
pp. 1272-1277 ◽  
Author(s):  
D. Neogy ◽  
T. Purohit ◽  
A. Chatterji
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Magnetic Measurements

Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect ◽  
Organic Single Crystal

Spectroscopic studies and crystal field calculation for Nd3+ in single crystal K2YF5

2003 ◽  
Vol 353 (1-2) ◽  
pp. 95-101 ◽  
Author(s):  
Min Yin ◽  
Yunfeng Li ◽  
Ning Dong ◽  
V.N. Makhov ◽  
N.M. Khaidukov ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Spectroscopic Studies ◽  
Field Calculation

Controlling Chain Conformations of High-kFluoropolymer Dielectrics to Enhance Charge Mobilities in Rubrene Single-Crystal Field-Effect Transistors

2016 ◽  
Vol 28 (45) ◽  
pp. 10095-10102 ◽  
Author(s):  
Jwala M. Adhikari ◽  
Matthew R. Gadinski ◽  
Qi Li ◽  
Kaige G. Sun ◽  
Marcos A. Reyes-Martinez ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect ◽  
Chain Conformations

Impact of 2-Ethylhexyl Stereoisomers on the Electrical Performance of Single-Crystal Field-Effect Transistors

2018 ◽  
Vol 30 (44) ◽  
pp. 1804032 ◽  
Author(s):  
Tao He ◽  
Pawaret Leowanawat ◽  
Christian Burschka ◽  
Vladimir Stepanenko ◽  
Matthias Stolte ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Performance ◽  
Crystal Field Effect

scholarly journals Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

2004 ◽  
Vol 85 (17) ◽  
pp. 3899-3901 ◽  
Author(s):  
A. F. Stassen ◽  
R. W. I. de Boer ◽  
N. N. Iosad ◽  
A. F. Morpurgo
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Crystal Field Effect

Single-crystal field-effect transistors of benzoannulated fused oligothiophenes and oligoselenophenes

2007 ◽  
Vol 90 (7) ◽  
pp. 072102 ◽  
Author(s):  
Koichi Yamada ◽  
Toshihiro Okamoto ◽  
Kenichi Kudoh ◽  
Atsushi Wakamiya ◽  
Shigehiro Yamaguchi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect

Partial Dissolution of Charge Order Phase Observed in -(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor

2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Charge Order ◽  
Crystal Field Effect ◽  
Effect Transistor

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

scholarly journals EPR of Gd3+ in a Single Crystal of Thorium disulfide (ThS2)

1981 ◽  
Vol 36 (11) ◽  
pp. 1163-1168
Author(s):  
G. Amoretti ◽  
D. C. Giori ◽  
V. Varacca
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Site Symmetry ◽  
Spin Hamiltonian ◽  
Fitting Procedure ◽  
Numerical Fitting ◽  
Crystal Field Symmetry ◽  
Field Symmetry ◽  
Crystal Field Parameters ◽  
Low Symmetry

In this paper we report the experimental angular behaviour of the EPR spectra for a single crystal of Thorium disulfide (ThS2) doped with Gd3+ at very low concentration (of the order of 10 p.p.m.). The experimental data are interpreted in terms of a spin Hamiltonian which reflects the crystal field symmetry at the Th site, that is monoclinic Cs, and therefore shows that the doping ions enter substitutionally without lowering the site symmetry. The low symmetry and the unusually large values of the crystal field parameters b20 and b22 have made it necessary to use a numerical fitting procedure, starting from the exact numerical diagonalization of the energy matrix for any given direction of the static magnetic field.

Spin reorientation and crystal field in the single-crystal hydrideHoFe11TiH

2001 ◽  
Vol 63 (13) ◽  
Author(s):  
S. A. Nikitin ◽  
I. S. Tereshina ◽  
N. Yu. Pankratov ◽  
Yu. V. Skourski
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Spin Reorientation
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