Spin reorientation and crystal field in the single-crystal hydrideHoFe11TiH

2001 ◽  
Vol 63 (13) ◽  
Author(s):  
S. A. Nikitin ◽  
I. S. Tereshina ◽  
N. Yu. Pankratov ◽  
Yu. V. Skourski
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Spin Reorientation

High Field Torque Magnetometry Measurements on Y1.8Er0.2Fe14B

1987 ◽  
Vol 96 ◽  
Author(s):  
C. M. Williams ◽  
N. C. Koon ◽  
B. N. Das
Keyword(s):  
Field Theory ◽  
Single Crystal ◽  
Crystal Field ◽  
High Field ◽  
Magnetocrystalline Anisotropy ◽  
Spin Reorientation ◽  
Crystal Field Theory ◽  
First Order ◽  
Torque Magnetometry ◽  
Magnetocrystalline Anisotropy Energy

ABSTRACTThe magnetocrystalline anisotropy energy has been determined for single crystal Y1.8 Er0.2Fe14B in the (001) and (100) planes between 5 K and 300 K using torque magnetometry techniques. The results are compared with a model based on crystal field theory. Excellent agreement was obtained between the model and experiment. Both experiment and model showed a first order spin reorientation between the [001] and an angle 70 degrees from the [001] in the (100) plane.

Spin reorientation and crystal field in a single crystal

1998 ◽  
Vol 10 (6) ◽  
pp. 1403-1411 ◽  
Author(s):  
B García-Landa ◽  
D Gignoux ◽  
R Vert ◽  
D Fruchart ◽  
R Skolozdra
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Spin Reorientation

Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect ◽  
Organic Single Crystal

Spectroscopic studies and crystal field calculation for Nd3+ in single crystal K2YF5

2003 ◽  
Vol 353 (1-2) ◽  
pp. 95-101 ◽  
Author(s):  
Min Yin ◽  
Yunfeng Li ◽  
Ning Dong ◽  
V.N. Makhov ◽  
N.M. Khaidukov ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Spectroscopic Studies ◽  
Field Calculation

Controlling Chain Conformations of High-kFluoropolymer Dielectrics to Enhance Charge Mobilities in Rubrene Single-Crystal Field-Effect Transistors

2016 ◽  
Vol 28 (45) ◽  
pp. 10095-10102 ◽  
Author(s):  
Jwala M. Adhikari ◽  
Matthew R. Gadinski ◽  
Qi Li ◽  
Kaige G. Sun ◽  
Marcos A. Reyes-Martinez ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect ◽  
Chain Conformations

Impact of 2-Ethylhexyl Stereoisomers on the Electrical Performance of Single-Crystal Field-Effect Transistors

2018 ◽  
Vol 30 (44) ◽  
pp. 1804032 ◽  
Author(s):  
Tao He ◽  
Pawaret Leowanawat ◽  
Christian Burschka ◽  
Vladimir Stepanenko ◽  
Matthias Stolte ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Performance ◽  
Crystal Field Effect

THE COMBINED ANALYSIS OF SPECIFIC HEAT AND THERMAL EXPANSION OF Nd1−xLuxMn2 COMPOUNDS

1993 ◽  
Vol 07 (01n03) ◽  
pp. 810-813
Author(s):  
N.H. KIM-NGAN ◽  
P.E. BROMMER ◽  
J.J.M. FRANSE
Keyword(s):  
Magnetic Properties ◽  
Thermal Expansion ◽  
Thermodynamic Properties ◽  
Specific Heat ◽  
Crystal Field ◽  
Spin Fluctuation ◽  
Spin Reorientation ◽  
Antiferromagnetic Order ◽  
Combined Analysis ◽  
Temperature Range

Specific heat and thermal expansion measurements have been performed on Nd1−xLUxMn2 in the temperature range between 1.5K and 300K. Below 10K, anomalies are observed which are ascribed to a spin reorientation of the Nd sublattice. These anomalies are only slightly affected by the substitution of Nd by Lu. Large effects, however, are observed on the magnetic properties of the Mn sublattice. The antiferromagnetic order disappears for x exceeding 0.30. The data are analysed in terms of Grüneisen parameters. In the paramagnetic compound LuMn2, a spin-fluctuation contribution to the thermodynamic properties is observed. In the Nd-containing compounds, distinct contributions from the crystal field acting on the Nd ions can be distinguished. The variation of the magnetic properties of the Mn sublattice with the concentration of Lu is discussed.

scholarly journals Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

2004 ◽  
Vol 85 (17) ◽  
pp. 3899-3901 ◽  
Author(s):  
A. F. Stassen ◽  
R. W. I. de Boer ◽  
N. N. Iosad ◽  
A. F. Morpurgo
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Crystal Field Effect

Single-crystal field-effect transistors of benzoannulated fused oligothiophenes and oligoselenophenes

2007 ◽  
Vol 90 (7) ◽  
pp. 072102 ◽  
Author(s):  
Koichi Yamada ◽  
Toshihiro Okamoto ◽  
Kenichi Kudoh ◽  
Atsushi Wakamiya ◽  
Shigehiro Yamaguchi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect

Partial Dissolution of Charge Order Phase Observed in -(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor

2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Charge Order ◽  
Crystal Field Effect ◽  
Effect Transistor

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

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