The electronic properties of plasma‐deposited films of hydrogenated amorphous SiNx(0

1986 ◽  
Vol 59 (4) ◽  
pp. 1251-1258 ◽  
Author(s):  
A. J. Lowe ◽  
M. J. Powell ◽  
S. R. Elliott
Keyword(s):  
Electronic Properties ◽  
Plasma Deposited Films ◽  
Hydrogenated Amorphous ◽  
Deposited Films

Electronic properties of plasma-deposited films prepared from tetramethylsilane

1992 ◽  
Vol 209 (2) ◽  
pp. 250-258 ◽  
Author(s):  
J. Tyczkowski ◽  
E. Odrobina ◽  
P. Kazimierski ◽  
H. Bässler ◽  
A. Kisiel ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Plasma Deposited Films ◽  
Deposited Films

Aging of Plasma-Deposited Films Prepared from Organic Monomers

2007 ◽  
Vol 4 (S1) ◽  
pp. S784-S789 ◽  
Author(s):  
Sufal Swaraj ◽  
Umut Oran ◽  
Andreas Lippitz ◽  
Jörg F. Friedrich ◽  
Wolfgang E. S. Unger
Keyword(s):  
Plasma Deposited Films ◽  
Deposited Films

Hydrogenated Amorphous Silicon Nitride: Structural and Electronic Properties

1998 ◽  
Vol 538 ◽  
Author(s):  
J. F. Justo ◽  
F. De Brito Mota ◽  
A. Fazziom
Keyword(s):  
Silicon Nitride ◽  
Ab Initio ◽  
Amorphous Silicon ◽  
Electronic Properties ◽  
Interatomic Potential ◽  
Hydrogen Atoms ◽  
Hydrogen Incorporation ◽  
Amorphous Silicon Nitride ◽  
Structural And Electronic Properties ◽  
Hydrogenated Amorphous

AbstractWe combined empirical and ab initio methods to study structural and electronic properties of amorphous silicon nitride. For such study, we developed an interatomic potential to describe the interactions between silicon, nitrogen, and hydrogen atoms. Using this potential, we performed Monte Carlo simulations in a simulated annealing scheme to study structural properties of amorphous silicon nitride. Then this potential was used to generate relevant structures of a-SiNx:Hy which were input configurations to ab initio calculations. We investigated the electronic and structural role played by hydrogen incorporation in amorphous silicon nitride.

Windowless Wide Area Vuv Lamp for Energy Assisted CVD

1988 ◽  
Vol 129 ◽  
Author(s):  
Z. Yu ◽  
T. Y. Sheng ◽  
H. Zarnani ◽  
G. J. Collins
Keyword(s):  
Vacuum Ultraviolet ◽  
Hydrogenated Amorphous Silicon ◽  
Electron Gun ◽  
Large Area ◽  
Deposition Rates ◽  
Surface Mobility ◽  
Excited Species ◽  
Hydrogenated Amorphous ◽  
Deposited Films ◽  
Excited Radical

ABSTRACTA ring shaped cold cathode electron gun provides a large area disc shaped vacuum ultraviolet (VUV) light source up to 20 cm in diameter. The windowless disc plasma is also a source of radical and excited atomic gas species. VUV photons, excited species, and radicals can all assist dissociation of CVD feedstock reactants via volume photo-absorption and sensitized atom-molecule collisions, respectively. In addition, the excited radical flux and VUV impingement on the film may also assist heterogeneous surface reactions and increase surface mobility of absorbed species. Thin films of aluminum nitride, Si3N4, and hydrogenated amorphous silicon have been deposited at temperatures between 100°C - 400°C. The deposited films show significant improvement over other photoassisted CVD processes in the film quality achieved, the substrate temperature required and the maximum deposition rates.

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