scholarly journals Majority‐carrier capture cross‐section determination in the large deep‐trap concentration cases

1986 ◽  
Vol 59 (5) ◽  
pp. 1562-1569 ◽  
Author(s):  
J. R. Morante ◽  
J. Samitier ◽  
A. Cornet ◽  
A. Herms ◽  
P. Cartujo
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Deep Trap ◽  
Capture Cross ◽  
Carrier Capture ◽  
Trap Concentration ◽  
Majority Carrier

Al Implantation and Post Annealing Effects in n-Type 4H-SiC

2020 ◽  
Vol 15 (7) ◽  
pp. 777-782
Author(s):  
Woo-Young Son ◽  
Myeong-Cheol Shin ◽  
Michael Schweitz ◽  
Sang-Kwon Lee ◽  
Sang-Mo Koo
Keyword(s):  
Energy Level ◽  
Ion Implantation ◽  
Cross Section ◽  
Epitaxial Layer ◽  
Capture Cross Section ◽  
Deep Level ◽  
Capture Cross ◽  
Trap Concentration ◽  
Post Annealing ◽  
Measurement Results

We investigated the post annealing effect of Al implantation in n-type 4H-SiC by using deep level transient spectroscopy (DLTS). The Schottky contacts were deposited on n-type epitaxial layer on 4H-SiC substrates and the effect of Al-implantation on the structures has been examined with and without post-annealing process. n-type epitaxial layer on a 4H-SiC substrate was implanted with Al-ion at an energy of 300 keV and a dose of 1.0 × 1015 cm–2. The effect of annealing has been studied by annealing the structures at 1700 C after ion implantation. DLTS measurements were performed before and after ion implantation, in order to determine the characteristics and magnitudes of the resulting electrical defects. Based on the DLTS measurement results, typical Z1/2 peak of SiC is obtained in reference samples without implantation. Z1/2 of the non-annealed samples had an energy level of 0.831 eV. The energy level was found to be deeper after the implantation whereas the capture cross section is about 60 times smaller and the trap concentration increases by a factor of 10. In other words, the Al-ion implantation clearly influenced the electrical characteristics of the sample and consequently also the DLTS measurement results. After post-implantation annealing, a new shallow defect (I2Al-A) was identified (∼0.028 eV) with a capture cross section of 1.9 × 10–21 cm –2 and a trap concentration of 4.8 × 1015 cm–3.

Minority carrier capture cross section of the EL2 defect in GaAs

1992 ◽  
Vol 61 (20) ◽  
pp. 2452-2454 ◽  
Author(s):  
M. A. Zaidi ◽  
H. Maaref ◽  
J. C. Bourgoin
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Minority Carrier ◽  
Capture Cross ◽  
Carrier Capture

Measurements of the neutron capture cross section of 243Am around 23.5 keV

2021 ◽  
pp. 1-6
Author(s):  
Yu Kodama ◽  
Tatsuya Katabuchi ◽  
Gerard Rovira ◽  
Atsushi Kimura ◽  
Shoji Nakamura ◽  
...  
Keyword(s):  
Cross Section ◽  
Neutron Capture ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Neutron Capture Cross Section

THERMAL NEUTRON CAPTURE CROSS-SECTION OF Na23 AND Mn55

1953 ◽  
Vol 31 (3) ◽  
pp. 204-206 ◽  
Author(s):  
Rosalie M. Bartholomew ◽  
R. C. Hawkings ◽  
W. F. Merritt ◽  
L. Yaffe
Keyword(s):  
Thermal Neutron ◽  
Cross Section ◽  
Cross Sections ◽  
Neutron Capture ◽  
Half Life ◽  
Capture Cross Section ◽  
Thermal Neutron Capture ◽  
Capture Cross ◽  
Neutron Capture Cross Section ◽  
Capture Cross Sections

The thermal neutron capture cross sections of Na23 and Mn55 have been determined using the activation method. The values are 0.53 ± 0.03 and 12.7 ± 0.3 barns respectively with respect to σAul97 = 93 barns. These agree well with recent pile oscillator results. The half-life for Mn56 is found to be 2.576 ± 0.002 hr.

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