Capture cross section and trap concentration of holes in silicon dioxide

1976 ◽  
Vol 47 (3) ◽  
pp. 1079-1081 ◽  
Author(s):  
T. H. Ning
Keyword(s):  
Silicon Dioxide ◽  
Cross Section ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Trap Concentration

scholarly journals Majority‐carrier capture cross‐section determination in the large deep‐trap concentration cases

1986 ◽  
Vol 59 (5) ◽  
pp. 1562-1569 ◽  
Author(s):  
J. R. Morante ◽  
J. Samitier ◽  
A. Cornet ◽  
A. Herms ◽  
P. Cartujo
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Deep Trap ◽  
Capture Cross ◽  
Carrier Capture ◽  
Trap Concentration ◽  
Majority Carrier

Polysiliodn Annealing and its Inflience on Floating Gate Eeprom Degation

1990 ◽  
Vol 182 ◽  
Author(s):  
Rakesh B. Seim ◽  
L. B. Andeion
Keyword(s):  
High Temperature ◽  
Silicon Dioxide ◽  
Cross Section ◽  
Capture Cross Section ◽  
Charge Trapping ◽  
Trapping Efficiency ◽  
Constant Current ◽  
Capture Cross ◽  
Oxide Interface ◽  
Thin Oxide

AbstractExperimental results on the influence of prooessing on degradation of thin silicon dioxide films are reported. The high temperature polysilicon oxidation degrades the integrity and robustness of thermally grown dry oxide as shown by constant current charge to breakdown measuremeits.Furthermore the influence of high temperature processing on the charge trapping properties of the tunnel oxide (silicon dioxide) are ascertained. The details of electron trapping its capture cross section, areal concentration and trapping efficiency as studied by high field dark current-voltage method is presented. Generally, the dominant −15 electron trap with a large capture cross section of 10 cm2 is observed and is believed to be due to phosphorus near polysilicon/thin oxide interface. In addition the QBD reduction is correlated to outdiffusion of water from the thin oxide as seen by reduction in the hysteretic instability of I-V curves.

Al Implantation and Post Annealing Effects in n-Type 4H-SiC

2020 ◽  
Vol 15 (7) ◽  
pp. 777-782
Author(s):  
Woo-Young Son ◽  
Myeong-Cheol Shin ◽  
Michael Schweitz ◽  
Sang-Kwon Lee ◽  
Sang-Mo Koo
Keyword(s):  
Energy Level ◽  
Ion Implantation ◽  
Cross Section ◽  
Epitaxial Layer ◽  
Capture Cross Section ◽  
Deep Level ◽  
Capture Cross ◽  
Trap Concentration ◽  
Post Annealing ◽  
Measurement Results

We investigated the post annealing effect of Al implantation in n-type 4H-SiC by using deep level transient spectroscopy (DLTS). The Schottky contacts were deposited on n-type epitaxial layer on 4H-SiC substrates and the effect of Al-implantation on the structures has been examined with and without post-annealing process. n-type epitaxial layer on a 4H-SiC substrate was implanted with Al-ion at an energy of 300 keV and a dose of 1.0 × 1015 cm–2. The effect of annealing has been studied by annealing the structures at 1700 C after ion implantation. DLTS measurements were performed before and after ion implantation, in order to determine the characteristics and magnitudes of the resulting electrical defects. Based on the DLTS measurement results, typical Z1/2 peak of SiC is obtained in reference samples without implantation. Z1/2 of the non-annealed samples had an energy level of 0.831 eV. The energy level was found to be deeper after the implantation whereas the capture cross section is about 60 times smaller and the trap concentration increases by a factor of 10. In other words, the Al-ion implantation clearly influenced the electrical characteristics of the sample and consequently also the DLTS measurement results. After post-implantation annealing, a new shallow defect (I2Al-A) was identified (∼0.028 eV) with a capture cross section of 1.9 × 10–21 cm –2 and a trap concentration of 4.8 × 1015 cm–3.

Measurements of the neutron capture cross section of 243Am around 23.5 keV

2021 ◽  
pp. 1-6
Author(s):  
Yu Kodama ◽  
Tatsuya Katabuchi ◽  
Gerard Rovira ◽  
Atsushi Kimura ◽  
Shoji Nakamura ◽  
...  
Keyword(s):  
Cross Section ◽  
Neutron Capture ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Neutron Capture Cross Section

THERMAL NEUTRON CAPTURE CROSS-SECTION OF Na23 AND Mn55

1953 ◽  
Vol 31 (3) ◽  
pp. 204-206 ◽  
Author(s):  
Rosalie M. Bartholomew ◽  
R. C. Hawkings ◽  
W. F. Merritt ◽  
L. Yaffe
Keyword(s):  
Thermal Neutron ◽  
Cross Section ◽  
Cross Sections ◽  
Neutron Capture ◽  
Half Life ◽  
Capture Cross Section ◽  
Thermal Neutron Capture ◽  
Capture Cross ◽  
Neutron Capture Cross Section ◽  
Capture Cross Sections

The thermal neutron capture cross sections of Na23 and Mn55 have been determined using the activation method. The values are 0.53 ± 0.03 and 12.7 ± 0.3 barns respectively with respect to σAul97 = 93 barns. These agree well with recent pile oscillator results. The half-life for Mn56 is found to be 2.576 ± 0.002 hr.

scholarly journals The 236U neutron capture cross-section measured at the n_TOF CERN facility

2017 ◽  
Vol 146 ◽  
pp. 11054
Author(s):  
M. Mastromarco ◽  
M. Barbagallo ◽  
M.J. Vermeulen ◽  
N. Colonna ◽  
S. Altstadt ◽  
...  
Keyword(s):  
Cross Section ◽  
Neutron Capture ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Neutron Capture Cross Section
Sign in / Sign up

Export Citation Format

Share Document