Linear electro‐optic effects in zinc blende semiconductors

1985 ◽  
Vol 58 (12) ◽  
pp. 4666-4669 ◽  
Author(s):  
A. Hernández‐Cabrera ◽  
C. Tejedor ◽  
F. Meseguer
Keyword(s):  
2010 ◽  
Vol 29-32 ◽  
pp. 1803-1808 ◽  
Author(s):  
Chun Li ◽  
Fan Yang ◽  
Wan Lin Guo

Strain-dependent electro-optic constant r33 and nonlinear optical coefficient d33 of ZnO are investigated systematically using density-functional theory based linear-response perturbation method. Miscellaneous properties, such as dielectric constants, elastic constants, piezoelectric coefficients, nonlinear optical coefficients, and electro-optic constants of other II-VI compound semiconductors (both Wurtzite and Zinc-blende structures) are also calculated for comparison with the results of unstrained ZnO. Extensive first-principles calculations show that both r33 and d33 of ZnO decrease almost linearly with increasing strains, which indicates that appropriate compression along the [0001] direction of ZnO could enhance its electro-optic and nonlinear optical properties, while stretching may weaken the corresponding properties. Among the involved Wurtzite structures, ZnO has the highest elastic constant, piezoelectric coefficient and electro-optic constant, showing practical importance.


2018 ◽  
Vol 58 (1) ◽  
Author(s):  
Gwenaël Gaborit ◽  
Federico Sanjuan ◽  
Jean-Louis Coutaz

In this paper, we give an overview of emission and detection of terahertz electromagnetic pulses using, respectively, optical rectification and electro-optic effect in [111] zinc blende crystals. This crystal orientation allows us to generate and read any polarization state of the THz beam only by controlling the polarization state of the laser beam that excites or probes the emitting and receiving crystals. This technique is very useful for polarimetric terahertz spectroscopic studies.


Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.


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