Forward I‐V plot for nonideal Schottky diodes with high series resistance

1985 ◽  
Vol 58 (2) ◽  
pp. 1075-1077 ◽  
Author(s):  
Roberto M. Cibils ◽  
Román H. Buitrago
Keyword(s):  
Series Resistance ◽  
Schottky Diodes ◽  
High Series

Electrical Properties of Schottky Contacts of TiW on RTCVD Si1-x-yGexCy Films

1997 ◽  
Vol 470 ◽  
Author(s):  
Jian Mi ◽  
Yilu Zhang ◽  
Patricia Warren ◽  
Cary Y. Yang
Keyword(s):  
Electrical Properties ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Tunneling Current ◽  
Chemical Vapor ◽  
Schottky Contacts ◽  
Crystal Defects ◽  
Recombination Centers ◽  
High Series

ABSTRACTHigh-quality epitaxial Si1-x-yGexCy layers were grown on Si by rapid thermal chemical vapor deposition. Schottky diodes of TiW/SiGeC were fabricated using conventional Si processes. I-V and C-V measurements were performed to assess effects of crystal defects in the alloy on the electrical properties. For defective SiGeC films due to non-substitutional carbon, high series resistance and additional tunneling current were measured under forward bias, as well as leakage current under reverse bias. A transport mechanism of deep generation/recombination centers formed by carbon complexes is proposed to explain the I-V characteristics.

On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes

2006 ◽  
Vol 83 (3) ◽  
pp. 577-581 ◽  
Author(s):  
M.M. Bülbül ◽  
S. Zeyrek ◽  
Ş. Altındal ◽  
H. Yüzer
Keyword(s):  
Series Resistance ◽  
Schottky Diodes ◽  
Temperature Dependent ◽  
Dependent Series
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