Feedback system for the characterization of nonideal Schottky diodes with high series resistance

1985 ◽  
Vol 56 (9) ◽  
pp. 1809-1811
Author(s):  
Roberto M. Cibils ◽  
Román H. Buitrago
Keyword(s):  
Series Resistance ◽  
Schottky Diodes ◽  
Feedback System ◽  
High Series

Electrical Properties of Schottky Contacts of TiW on RTCVD Si1-x-yGexCy Films

1997 ◽  
Vol 470 ◽  
Author(s):  
Jian Mi ◽  
Yilu Zhang ◽  
Patricia Warren ◽  
Cary Y. Yang
Keyword(s):  
Electrical Properties ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Tunneling Current ◽  
Chemical Vapor ◽  
Schottky Contacts ◽  
Crystal Defects ◽  
Recombination Centers ◽  
High Series

ABSTRACTHigh-quality epitaxial Si1-x-yGexCy layers were grown on Si by rapid thermal chemical vapor deposition. Schottky diodes of TiW/SiGeC were fabricated using conventional Si processes. I-V and C-V measurements were performed to assess effects of crystal defects in the alloy on the electrical properties. For defective SiGeC films due to non-substitutional carbon, high series resistance and additional tunneling current were measured under forward bias, as well as leakage current under reverse bias. A transport mechanism of deep generation/recombination centers formed by carbon complexes is proposed to explain the I-V characteristics.

Electrical and Structural Characterization of Ti Contacts to Si0.89 Ge0.11/Si(001) Epilayers

1995 ◽  
Vol 402 ◽  
Author(s):  
M. Lyakas ◽  
M. Beregovsky ◽  
I. Moskowitz ◽  
M. Eizenberg
Keyword(s):  
Fermi Level ◽  
Structural Characterization ◽  
Ideality Factor ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Flat Band ◽  
Thermal Treatments ◽  
Electrical Parameters ◽  
Semiconductor Contacts

AbstractThe properties of thin (350 Å) Ti layers deposited on Si0.89Ge0.11 layers epitaxially grown on Si(001) were studied as a function of isochronal (30 min.) thermal treatments in the temperature range Ta=550–800°C. Both as-deposited and annealed at Ta up to 750°C Schottky diodes revealed near-ideal I–V and C–V characteristics with the same flat-band barrier height eV. The results indicate that at these Ta the Fermi level is pinned with respect to the conduction band.Annealing at 800°C resulted in an improvement of the Schottky diodes quality and a drop in and the series resistance Rs of the contacts. The values of the ideality factor n and ( measured were 1.03±0.02 and 0.56±0.007 eV, correspondingly. The electrical parameters of these metal/semiconductor contacts were correlated with the dynamics of interfacial reactions due to the applied heat-treatments.

Forward I‐V plot for nonideal Schottky diodes with high series resistance

1985 ◽  
Vol 58 (2) ◽  
pp. 1075-1077 ◽  
Author(s):  
Roberto M. Cibils ◽  
Román H. Buitrago
Keyword(s):  
Series Resistance ◽  
Schottky Diodes ◽  
High Series
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