scholarly journals Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots

2010 ◽  
Vol 107 (7) ◽  
pp. 074309 ◽  
Author(s):  
J. M. Ulloa ◽  
P. M. Koenraad ◽  
M. Bonnet-Eymard ◽  
A. Létoublon ◽  
N. Bertru
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Capping Layer ◽  
Lattice Matched ◽  
Inp Quantum Dots

Optical, Electronic, and Structural Properties of Uncoupled and Close-Packed Arrays of InP Quantum Dots

1998 ◽  
Vol 102 (49) ◽  
pp. 9791-9796 ◽  
Author(s):  
Olga I. Mićić ◽  
Kim M. Jones ◽  
Andrew Cahill ◽  
Arthur J. Nozik
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Electronic And Structural Properties ◽  
Inp Quantum Dots

Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots

2014 ◽  
Vol 116 (13) ◽  
pp. 134301 ◽  
Author(s):  
J. M. Ulloa ◽  
D. F. Reyes ◽  
A. D. Utrilla ◽  
A. Guzman ◽  
A. Hierro ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Structural Properties ◽  
Layer Growth ◽  
Capping Layer ◽  
Layer Growth Rate

scholarly journals Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer

2021 ◽  
Author(s):  
Dr. Elisa Maddalena Sala ◽  
Max Godsland ◽  
Young In Na ◽  
Aristotelis Trapalis ◽  
Jon Heffernan
Keyword(s):  
Quantum Dots ◽  
Crystallization Process ◽  
Droplet Epitaxy ◽  
Inas Quantum Dots ◽  
Organic Vapor ◽  
Transmission Electron ◽  
Metal Organic ◽  
First Time ◽  
Lattice Matched ◽  
Inp Quantum Dots

Abstract InAs quantum dots (QDs) are grown on an In0.53Ga0.47As interlayer and embedded in an InP(100) matrix. They are fabricated via droplet epitaxy (DE) in a Metal Organic Vapor Phase Epitaxy (MOVPE) reactor. Formation of metallic Indium droplets on the In0.53Ga0.47As lattice-matched layer and their crystallization into QDs is demonstrated for the first time in MOVPE. The presence of the In0.53Ga0.47As layer prevents the formation of an unintentional non-stoichiometric 2D layer underneath and around the QDs, via suppression of the As-P exchange. The In0.53Ga0.47As layer affects the surface diffusion leading to a modified droplet crystallization process, where unexpectedly the size of the resulting QDs is found to be inversely proportional to the Indium supply. Bright single dot emission is detected via micro-photoluminescence at low temperature, ranging from 1440 to 1600 nm, covering the technologically relevant telecom C-band. Transmission Electron Microscopy (TEM) investigations reveal buried quantum dots with truncated pyramid shape without defects or dislocations.

Optical and structural properties of InP quantum dots embedded in(AlxGa1−x)0.51In0.49P

2009 ◽  
Vol 79 (3) ◽  
Author(s):  
W.-M. Schulz ◽  
R. Roßbach ◽  
M. Reischle ◽  
G. J. Beirne ◽  
M. Bommer ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Inp Quantum Dots

Unveiling structural properties of self-assembled quantum dots

2013 ◽  
Author(s):  
M. Gunasekera ◽  
C. Rajapaksha ◽  
A. Freundlich
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Self Assembled

Highly luminescent InP-In(Zn)P/ZnSe/ZnS core/shell/shell colloidal quantum dots with tunable emission synthesized based on growth-doping

2021 ◽  
Author(s):  
Cong Shen ◽  
Yan Qing Zhu ◽  
Zixiao Li ◽  
Jingling Li ◽  
Hong Tao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Near Infrared ◽  
Infrared Region ◽  
Colloidal Quantum Dots ◽  
High Quality ◽  
Promising Alternative ◽  
Lower Toxicity ◽  
Near Infrared Region ◽  
Inp Quantum Dots ◽  
Tunable Emission

InP quantum dots (QDs) are considered as the most promising alternative to Cd-based QDs with the lower toxicity and emission spectrum tunability ranging from visible to near-infrared region. Although high-quality...

scholarly journals Imaging Pancreatic Cancer Using Bioconjugated InP Quantum Dots

ACS Nano ◽  
2009 ◽  
Vol 3 (3) ◽  
pp. 502-510 ◽  
Author(s):  
Ken-Tye Yong ◽  
Hong Ding ◽  
Indrajit Roy ◽  
Wing-Cheung Law ◽  
Earl J. Bergey ◽  
...  
Keyword(s):  
Pancreatic Cancer ◽  
Quantum Dots ◽  
Inp Quantum Dots

ELECTRON STRUCTURE INVESTIGATIONS OF InGaP/GaAs(100) HETEROSTRUCTURES WITH InP QUANTUM DOTS

2007 ◽  
Vol 06 (03n04) ◽  
pp. 215-219
Author(s):  
E. P. DOMASHEVSKAYA ◽  
V. A. TEREKHOV ◽  
V. M. KASHKAROV ◽  
S. YU. TURISHCHEV ◽  
S. L. MOLODTSOV ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Emission Spectra ◽  
Luminescence Spectra ◽  
Partial Density ◽  
Edge Structure ◽  
X Ray ◽  
Metal Organic ◽  
Structure Investigations ◽  
First Time ◽  
Inp Quantum Dots

Ultrasoft X-ray emission spectra (USXES) and X-ray absorption near-edge structure (XANES) spectra with the use of synchrotron radiation in the range of P L2,3-edges were obtained for the first time for nanostructures with InP quantum dots grown on GaAs 〈100〉 substrates by vapor-phase epitaxy from metal–organic compounds. These spectra represent local partial density of states in the valence and conduction bands. The additional XANES peak is detected; its intensity depends on the number of monolayers forming quantum dots. Assumptions are made on the band-to-band origin of luminescence spectra in the studied nanostructures.

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