Optical, Electronic, and Structural Properties of Uncoupled and Close-Packed Arrays of InP Quantum Dots

1998 ◽  
Vol 102 (49) ◽  
pp. 9791-9796 ◽  
Author(s):  
Olga I. Mićić ◽  
Kim M. Jones ◽  
Andrew Cahill ◽  
Arthur J. Nozik
2010 ◽  
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J. M. Ulloa ◽  
P. M. Koenraad ◽  
M. Bonnet-Eymard ◽  
A. Létoublon ◽  
N. Bertru

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Sunida Awirothananon ◽  
Wei Dong Sheng ◽  
Adam Babinski ◽  
Sergei Studenikin ◽  
Sylvain Raymond ◽  
...  

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...  

2013 ◽  
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C. Rajapaksha ◽  
A. Freundlich

Author(s):  
Cong Shen ◽  
Yan Qing Zhu ◽  
Zixiao Li ◽  
Jingling Li ◽  
Hong Tao ◽  
...  

InP quantum dots (QDs) are considered as the most promising alternative to Cd-based QDs with the lower toxicity and emission spectrum tunability ranging from visible to near-infrared region. Although high-quality...


1995 ◽  
Vol 51 (13) ◽  
pp. 8668-8671 ◽  
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David J. Singh ◽  
Warren E. Pickett

ACS Nano ◽  
2009 ◽  
Vol 3 (3) ◽  
pp. 502-510 ◽  
Author(s):  
Ken-Tye Yong ◽  
Hong Ding ◽  
Indrajit Roy ◽  
Wing-Cheung Law ◽  
Earl J. Bergey ◽  
...  

2007 ◽  
Vol 06 (03n04) ◽  
pp. 215-219
Author(s):  
E. P. DOMASHEVSKAYA ◽  
V. A. TEREKHOV ◽  
V. M. KASHKAROV ◽  
S. YU. TURISHCHEV ◽  
S. L. MOLODTSOV ◽  
...  

Ultrasoft X-ray emission spectra (USXES) and X-ray absorption near-edge structure (XANES) spectra with the use of synchrotron radiation in the range of P L2,3-edges were obtained for the first time for nanostructures with InP quantum dots grown on GaAs 〈100〉 substrates by vapor-phase epitaxy from metal–organic compounds. These spectra represent local partial density of states in the valence and conduction bands. The additional XANES peak is detected; its intensity depends on the number of monolayers forming quantum dots. Assumptions are made on the band-to-band origin of luminescence spectra in the studied nanostructures.


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