Admittance frequency dependence of Schottky barriers formed on dc triode sputtered amorphous silicon: Hydrogen influence on deep gap state characteristics

1985 ◽  
Vol 58 (3) ◽  
pp. 1292-1301 ◽  
Author(s):  
D. Mencaraglia ◽  
A. Amaral ◽  
J. P. Kleider
Keyword(s):  
Frequency Dependence ◽  
Amorphous Silicon ◽  
Schottky Barriers ◽  
Gap State

The temperature dependence of the barrier height in amorphous-silicon Schottky barriers

1987 ◽  
Vol 56 (1) ◽  
pp. 71-78 ◽  
Author(s):  
D. R. Bapat ◽  
K. L. Narasimhan ◽  
Ravi Kuchibhotla
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Barrier Height ◽  
Schottky Barriers

Schottky barriers on phosphorus-doped hydrogenated amorphous silicon: The effects of tunneling

1986 ◽  
Vol 33 (10) ◽  
pp. 6936-6945 ◽  
Author(s):  
W. B. Jackson ◽  
R. J. Nemanich ◽  
M. J. Thompson ◽  
B. Wacker
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Schottky Barriers ◽  
Phosphorus Doped ◽  
Hydrogenated Amorphous

Effects of Nitrogen Incorporation on Gap-State Density in Chemically Vapor-Deposited Amorphous Silicon

1982 ◽  
Vol 21 (Part 2, No. 6) ◽  
pp. L377-L378 ◽  
Author(s):  
Goro Sasaki ◽  
Makoto Kondo ◽  
Shizuo Fujita ◽  
Akio Sasaki
Keyword(s):  
Amorphous Silicon ◽  
State Density ◽  
Nitrogen Incorporation ◽  
Chemically Vapor Deposited ◽  
Gap State
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