Short‐term isothermal annealing of polyethylene single crystals

1985 ◽  
Vol 58 (8) ◽  
pp. 2822-2830 ◽  
Author(s):  
David T. Grubb ◽  
J. Jui‐Hsiang Liu
Author(s):  
С.В. Пляцко ◽  
Л.В. Рашковецкий

AbstractThe effect of a fast neutron flux (Φ = 10^14–10^15 cm^–2) on the electrical and photoluminescence properties of p -CdZnTe single crystals is studied. Isothermal annealing is performed ( T = 400–500 K), and the activation energy of the dissociation of radiation-induced defects is determined at E _D ≈ 0.75 eV.


1989 ◽  
Vol 157 ◽  
Author(s):  
W. Zhou ◽  
D.X. Cao ◽  
D.K. Sood

ABSTRACTIsothermal annealing behaviour of intrinsic amorphous layers produced by stoichiometric implantation in a—axis oriented α—Al2O3 single crystals has been studied. The amorphous phase transforms directly to α—Al2O3 at a well defined planar interface which moves towards the free surface. The epitaxial growth slows down after initial rapid crystallization, indicating two separate regimes. The interface velocity shows Arrhenius behaviour in both regimes with activation energies of 0.6 and 0.08 eV respectively. There is an evidence for additional surface or random crystallization into κ or γ-Al2O3 phases within the first few nm on the surface, after prolonged annealing. These results are remarkably different from those reported previously for c–axis oriented Al2O3 crystals, showing the importance of substrate orientation during crystallization. A tentative model to explain the crystallization behaviour is discussed.


1984 ◽  
Vol 123 (1) ◽  
pp. K63-K67 ◽  
Author(s):  
Yu. P. Gnatenko ◽  
P. A. Skubenko ◽  
Z. D. Kovalyuk ◽  
V. M. Kaminskii

Author(s):  
N. A. Kalanda

The influence of thermocycling annealing processes on the oxygen ordering degree (order parameter) in theYBa2Cu3O7-δ single crystals have been studied. It was determined that an increase in the critical temperature of the onset of the transition to the superconducting state during step annealing procedures is consistent with decrease of the σс/σаb parameter. This fact indicates the redistribution of the electronic density between the Cu(2)O2 and Cu(1)O1-d structurally-inhomogeneous planes, due to the formation of the oxygen long-range ordering in the O(4)—Cu(1)—O(4) linear groups along the (b) crystal structure axis of the unit cell, and removal of the oxygen defects in the square nets of the Cu(2)O2 planes. The existence of a critical value of the conductivity anisotropy σс/σаb, below which its behavior does not correlate with the change of Тс, has been proved. In this case, the increase of Тс and the orthorhombic distortion of the crystal structure at the isothermal annealing processes occur due to the amplification of the «interlayer» interaction between the Cu(2)О2 and Cu(1)О1-δ planes. As a result, the contribution of the Cu(1)О1-δ chain layers in the electronstate density on the Fermi level increases. These layers could be the superconducting ones by means of the Cooper pairs tunneling from the Cu(2)О2 planes, forming the induced superconductivity there.


2021 ◽  
Vol 316 ◽  
pp. 975-980
Author(s):  
Alexander A. Solovyev ◽  
Vladislav V. Rybin ◽  
Artem V. Kulagin

The behavior of linear defects in p-type silicon (111) carrying a direct current of density 0−15×105 A/m2 in the [110] direction are studied in the temperature range T=850–1000 K during isothermal annealing. The regularities of change in the linear density and maximum path of dislocations in slip lines are revealed. A model of linear defects displacement in silicon single crystals in the field of internal stresses under an electric current is proposed. Matching theory with experimental data has made it possible to reveal the dependence of this distribution on the internal stresses relaxation time.


2012 ◽  
Vol 504-506 ◽  
pp. 143-148 ◽  
Author(s):  
Gregory Gerstein ◽  
Marc Nowak ◽  
Marten Sebastian Bierbaum ◽  
Tatjana Zhuravina ◽  
Mirko Schaper ◽  
...  

The effect of short-term electrical pulses on metallic single crystals, with and without the application of external mechanical stresses, was investigated with the aid of deformation reliefs. The nickel-cobalt single crystals were subjected to electrical pulses and subsequently microscopically measured. In doing this, it was established that an electrical pulse without a simultaneously applied mechanical stress, has no influence on the deformation relief. It was possible to show that on loading the single crystal with a mechanical stress, the deformation relief significantly changes even when the stress was markedly below the flow stress.


2016 ◽  
Vol 39 ◽  
Author(s):  
Mary C. Potter

AbstractRapid serial visual presentation (RSVP) of words or pictured scenes provides evidence for a large-capacity conceptual short-term memory (CSTM) that momentarily provides rich associated material from long-term memory, permitting rapid chunking (Potter 1993; 2009; 2012). In perception of scenes as well as language comprehension, we make use of knowledge that briefly exceeds the supposed limits of working memory.


Author(s):  
A.R. Pelton ◽  
A.F. Marshall ◽  
Y.S. Lee

Amorphous materials are of current interest due to their desirable mechanical, electrical and magnetic properties. Furthermore, crystallizing amorphous alloys provides an avenue for discerning sequential and competitive phases thus allowing access to otherwise inaccessible crystalline structures. Previous studies have shown the benefits of using AEM to determine crystal structures and compositions of partially crystallized alloys. The present paper will discuss the AEM characterization of crystallized Cu-Ti and Ni-Ti amorphous films.Cu60Ti40: The amorphous alloy Cu60Ti40, when continuously heated, forms a simple intermediate, macrocrystalline phase which then transforms to the ordered, equilibrium Cu3Ti2 phase. However, contrary to what one would expect from kinetic considerations, isothermal annealing below the isochronal crystallization temperature results in direct nucleation and growth of Cu3Ti2 from the amorphous matrix.


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