Measurements of deep levels in high‐purity molecular beam epitaxial GaAs

1985 ◽  
Vol 57 (12) ◽  
pp. 5287-5289 ◽  
Author(s):  
R. Y. DeJule ◽  
M. A. Haase ◽  
G. E. Stillman ◽  
S. C. Palmateer ◽  
J. C. M. Hwang
Keyword(s):  
High Purity ◽  
Molecular Beam ◽  
Deep Levels ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAs

1980 ◽  
Vol 16 (5) ◽  
pp. 171 ◽  
Author(s):  
R.A. Stall ◽  
C.E.C. Wood ◽  
P.D. Kirchner ◽  
L.F. Eastman
Keyword(s):  
Molecular Beam ◽  
Growth Parameter ◽  
Deep Levels ◽  
Parameter Dependence ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Influence of growth conditions on deep levels in molecular-beam-epitaxial GaAs

1984 ◽  
Vol 20 (4) ◽  
pp. 174 ◽  
Author(s):  
C. Amano ◽  
A. Shibukawa ◽  
K. Ando ◽  
M. Yamaguchi
Keyword(s):  
Molecular Beam ◽  
Growth Conditions ◽  
Deep Levels ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Characterization of high‐purity Si‐doped molecular beam epitaxial GaAs

1985 ◽  
Vol 58 (12) ◽  
pp. 4685-4702 ◽  
Author(s):  
B. J. Skromme ◽  
S. S. Bose ◽  
B. Lee ◽  
T. S. Low ◽  
T. R. Lepkowski ◽  
...  
Keyword(s):  
High Purity ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Si Doped

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial

scholarly journals Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105cm2 V−1 s−1

1991 ◽  
Vol 58 (5) ◽  
pp. 478-480 ◽  
Author(s):  
C. R. Stanley ◽  
M. C. Holland ◽  
A. H. Kean ◽  
M. B. Stanaway ◽  
R. T. Grimes ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Electrical Characterization ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Photoluminescence characterization of molecular beam epitaxial GaAs grown using cracked AsH3

1984 ◽  
Vol 44 (2) ◽  
pp. 240-242 ◽  
Author(s):  
B. J. Skromme ◽  
G. E. Stillman ◽  
A. R. Calawa ◽  
G. M. Metze
Keyword(s):  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Growth‐induced shallow acceptor defect and related luminescence effects in molecular beam epitaxial GaAs

1990 ◽  
Vol 68 (2) ◽  
pp. 741-754 ◽  
Author(s):  
I. Szafranek ◽  
M. A. Plano ◽  
M. J. McCollum ◽  
S. A. Stockman ◽  
S. L. Jackson ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Shallow Acceptor ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Acceptor Defect
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