scholarly journals Palladium silicide formation under the influence of nitrogen and oxygen impurities

1985 ◽  
Vol 57 (2) ◽  
pp. 232-236 ◽  
Author(s):  
K. T. Ho ◽  
C.‐D. Lien ◽  
M‐A. Nicolet
Keyword(s):  
Silicide Formation ◽  
Palladium Silicide ◽  
Oxygen Impurities

Effect of Nitrogen and Oxygen Impurities on Tantalum Silicide Formation

1983 ◽  
Vol 25 ◽  
Author(s):  
K. T. Ho ◽  
C.-D. Lien ◽  
M-A. Nicolet ◽  
D. M. Scott
Keyword(s):  
Nuclear Reaction ◽  
Host Lattice ◽  
Chemical Affinity ◽  
Silicide Formation ◽  
Silicide Layer ◽  
Physical Effects ◽  
Rare Isotopes ◽  
Silicon System ◽  
Tantalum Silicide ◽  
Oxygen Impurities

ABSTRACTTantalum, being a refractory metal, is sensitive to ambient impurities when forming a silicide. By introducing nitrogen and oxygen impurities into a tantalum-silicon system, interesting chemical and physical effects are observed in their subsequent reactions. Nitrogen and oxygen behave similarly in such a system. If initially present in Ta, they segregate into the still unreacted Ta as the silicide layer grows at a somewhat retarded rate. The same impurities, initially present in Si, are immobile in the form of stable compouis and suppress TaSi2 growth. The rare isotopes 15N and 18O are introduced bY implantation and Profiled by 15N(P,α)12C and 18O(P,α)15N nuclear reaction analyses, respectively. In addition, unintentionally incorporated 18O is checked by the 16O(d,α) 14N nuclear reaction. The results are explained in terms of the moving species Si, and of the chemical affinity, solubility and diffusivity of the impurities in their host lattice.

Characteristics of Selective Lpcvd W Films By Silicon Reduction

1986 ◽  
Vol 71 ◽  
Author(s):  
R. V. Joshi ◽  
D. A. Smith
Keyword(s):  
Crystal Structure ◽  
Grain Size ◽  
Annealing Temperature ◽  
Film Surface ◽  
Silicide Formation ◽  
X Ray ◽  
Tungsten Hexafluoride ◽  
Deposited Film ◽  
Deposited Films ◽  
Oxygen Impurities

AbstractThe characteristics of Selective LPCVD tungsten films produced by silicon reduction of tungsten hexafluoride are presented. The tungsten films deposited using Si(100), Si(111) and polysilicon undoped and doped substrates are analyzed by X-RAY, TEM, RBS, AES, SIMS and SEM. The as deposited bcc tungsten films are polycrystalline with a grain size 80 - 100Å. The effect of annealing temperature and time on the crystal structure of films was studied. Tungsten reacts to form tungsten silicide at 600°C. The silicide grain size is of the order of 100 - 200Å at 600°C and increases gradually to 400 - 500Å at 1000°C. The oxygen impurities in the film retard the silicide formation further at 1000°C. Silicon from the substrate out-diffuses to the film surface and reacts with the presence of oxygen impurities in the annealing ambient to form Si-O at 1000°C. As deposited film resistivities of 130-140 micro-ohm-cm are achieved reproducibly and reach 60-70 micro-ohm-cm after 1000°C annealing in nitrogen or argon ambient. The impurities H, C, O and F are found in the as deposited films.

scholarly journals An inert marker study for palladium silicide formation: Si moves in polycrystalline Pd2Si

1985 ◽  
Vol 57 (2) ◽  
pp. 227-231 ◽  
Author(s):  
K. T. Ho ◽  
C.‐D. Lien ◽  
U. Shreter ◽  
M‐A. Nicolet
Keyword(s):  
Silicide Formation ◽  
Marker Study ◽  
Palladium Silicide

ChemInform Abstract: Palladium Silicide Formation from Silica-Supported Palladium Catalysts.

ChemInform ◽  
2010 ◽  
Vol 25 (21) ◽  
pp. no-no
Author(s):  
W. JUSZCZYK ◽  
Z. KARPINSKI ◽  
J. PIELASZEK ◽  
J. W. SOBCZAK
Keyword(s):  
Palladium Catalysts ◽  
Silicide Formation ◽  
Supported Palladium Catalysts ◽  
Supported Palladium ◽  
Palladium Silicide

UHV Interface Studies of Palladium Silicide Formation on Hydrogenated Amorphous Silicon Films

1986 ◽  
Vol 70 ◽  
Author(s):  
H. E. Rhodes ◽  
G. Apai ◽  
L. Rivaud ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Binding Energy ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Hydrogenated Amorphous Silicon ◽  
Binding Energies ◽  
Silicide Formation ◽  
Silicide Growth ◽  
Palladium Silicide ◽  
Hydrogenated Amorphous

ABSTRACTSilicide formation by reaction of palladium metal (Pd0) with hydrogenated amorphous silicon (a-Si:H) substrates was studied with Rutherford backscattering spectrometry (RBS), forward recoil spectrometry, x-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). Upon low-temperature (200° C) annealing, RBS and TEM show a single-phase Pd2Si. This phase grows with the square root of time, and the activation energy is identical to that of the corresponding metal on single-crystal silicon substrates. The growth is slightly faster for hydrogenated amorphous silicon, which is attributed to its amorphous structure. During silicide formation, the hydrogen is released from silicides and presumably outdiffuses into a vacuum without interfacial accumulation. Thus, barrier formation does not occur, and the presence of hydrogen in the substrates has no effect on silicide growth.The silicide electronic structure (core level binding energies, lineshapes, and d-band filling) of Pd2 Si on a-Si:H is identical to that of Pd2 Si formed on cr stalline silicon. Binding energy and peak shape analysis show the Pd2Si/Pd0 interface to be composed of one additional phase, Pd4Si, which has a well-defined binding energy (335.8 eV) and a narrow (FWHM = 1.1 eV), symmetric line shape. It has long been postulated that interface phases may be important in determining the phase sequence in silicide growth and the dominant diffusing species. This Pd4 Si interface phase may be important in understanding palladium silicide growth.

Impact of palladium silicide formation on the catalytic properties of Pd/SiO2 catalysts in liquid-phase semihydrogenation of phenylacetylene

2007 ◽  
Vol 261 (1) ◽  
pp. 29-35 ◽  
Author(s):  
Joongjai Panpranot ◽  
Kunnika Phandinthong ◽  
Terachai Sirikajorn ◽  
Masahiko Arai ◽  
Piyasan Praserthdam
Keyword(s):  
Liquid Phase ◽  
Catalytic Properties ◽  
Silicide Formation ◽  
Palladium Silicide

THE EFFECT OF OXYGEN ON THE FORMATION OF MANGANESE SILICIDE

2002 ◽  
Vol 16 (28n29) ◽  
pp. 1135-1142 ◽  
Author(s):  
Q. R. HOU ◽  
Z. M. WANG ◽  
Y. J. HE
Keyword(s):  
Thermal Annealing ◽  
Oxygen Concentration ◽  
Depth Profiling ◽  
Silicide Formation ◽  
Diffusion Couples ◽  
Reactive Deposition ◽  
Oxygen Contamination ◽  
Manganese Silicide ◽  
Effect Of Oxygen ◽  
Oxygen Impurities

The behavior of oxygen impurities during thermal annealing of manganese-silicon diffusion couples and reactive deposition of MnSi 1.7 films has been studied. Samples were prepared by reactive deposition or thermal evaporation of manganese on silicon (100) substrates, which were then annealed in vacuum. The investigation techniques included depth profiling using Auger electron spectroscopy and electrical resistance measurements. The oxygen contamination originated from the preparation chamber or exposing the sample to air before thermal annealing. The oxygen diffused into the manganese film and blocked the silicide formation. For reactive deposition of the MnSi 1.7 films, the competition between silicide formation and oxygen diffusion resulted in the formation of silicide films with oxygen concentration of about 5 at% or the diffusion of oxygen in the manganese film with oxygen concentration of about 35 at%. The presence of a higher concentration of oxygen in the manganese layer prevented any silicide formation.

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