scholarly journals Modeling of high fluence Ti ion implantation and vacuum carburization in steel

1985 ◽  
Vol 57 (4) ◽  
pp. 1114-1120 ◽  
Author(s):  
D. Farkas ◽  
I. L. Singer ◽  
M. Rangaswamy
Keyword(s):  
Ion Implantation ◽  
High Fluence ◽  
Vacuum Carburization

Optical, electrical, and chemical characterization of nanostructured InxGa1-xN formed by high fluence In+ ion implantation into GaN

2020 ◽  
pp. 110541
Author(s):  
C.A. Hernández-Gutiérrez ◽  
Yuriy Kudriavtsev ◽  
Dagoberto Cardona ◽  
A.G. Hernández ◽  
J.L. Camas-Anzueto
Keyword(s):  
Ion Implantation ◽  
Chemical Characterization ◽  
High Fluence

Modeling of High Fluence Titanium Ion Implantation and Vacuum Carburization in Steel

1983 ◽  
Vol 27 ◽  
Author(s):  
D. Farkas ◽  
I. L. Singer ◽  
M. Rangaswamy
Keyword(s):  
Vacuum System ◽  
Time Interval ◽  
High Fluence ◽  
Saturation Point ◽  
Mixing Processes ◽  
Depth Profiles ◽  
Vacuum Carburization ◽  
Sputtering Yield ◽  
Lattice Dilation ◽  
Best Fit

ABSTRACTConcentration vs. depth profiles have been calculated for Ti and C in 52100 Ti-implanted steel. A computer formalism was developed to account for diffusion and mixing processes, as well as sputtering and lattice dilation. A Gaussian distribution of Ti was assumed to be incorporated at each time interval. The effects of sputtering and lattice dilation were then included by means of an appropriate coordinate transformation. C was assumed to be gettered from the vacuum system in a one-to-one ratio with the surface Ti concentration up to a saturation point. Both Ti and C were allowed to diffuse. A series of experimental (Auger) concentration vs. depth profiles of Ti implanted steel were analyzed using the above-mentioned assumptions. A best fit procedure for these curves yielded information on the values of the sputtering yield, range and straggling, as well as the mixing processes that occur during the implantation. The observed values are in excellent agreement with the values predicted by existing theories.

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