Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions

2010 ◽  
Vol 96 (10) ◽  
pp. 102514 ◽  
Author(s):  
A. M. H. R. Hakimi ◽  
N. Banerjee ◽  
A. Aziz ◽  
J. W. A. Robinson ◽  
M. G. Blamire
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Spin Diffusion Length

Experimental estimation of the spin diffusion length in undoped p-Ge on Fe3Si using vertical spin-valve devices

2021 ◽  
Vol 129 (1) ◽  
pp. 013901
Author(s):  
A. Yamada ◽  
M. Yamada ◽  
T. Shiihara ◽  
M. Ikawa ◽  
S. Yamada ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Experimental Estimation ◽  
Spin Diffusion Length

Measurement of spin diffusion length in sputtered Ni films using a special exchange-biased spin valve geometry

2007 ◽  
Vol 90 (1) ◽  
pp. 012101 ◽  
Author(s):  
Charles E. Moreau ◽  
Ion C. Moraru ◽  
Norman O. Birge ◽  
William P. Pratt
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Spin Diffusion Length

Room-temperature spin transport in InAs nanowire lateral spin valve

RSC Advances ◽  
2016 ◽  
Vol 6 (79) ◽  
pp. 75736-75740 ◽  
Author(s):  
Zhicheng Wang ◽  
Dong Pan ◽  
Le Wang ◽  
Tingwen Wang ◽  
Bing Zhao ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Transport ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Spintronic Devices ◽  
Spin Diffusion Length ◽  
Nanowire Device ◽  
Large Spin

We report room temperature spin transport in an InAs nanowire device. A large spin signal of 35 kΩ and long spin diffusion length of 1.9 μm are achieved. We believe that these results open a practical way to design InAs NW based spintronic devices.

Spin diffusion length and giant magnetoresistance in spin-valve tri-layers

2000 ◽  
Vol 284-288 ◽  
pp. 1247-1248 ◽  
Author(s):  
Yoshiaki Hashimoto ◽  
Shingo Katsumoto ◽  
Chizuko Murayama ◽  
Yasuhiro Iye
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Spin Diffusion Length

FABRICATION OF LATERAL ORGANIC SPIN VALVES BASED ON La0.7Sr0.3MnO3 ELECTRODES

SPIN ◽  
2014 ◽  
Vol 04 (02) ◽  
pp. 1440008 ◽  
Author(s):  
S. W. JIANG ◽  
P. WANG ◽  
S. C. JIANG ◽  
B. B. CHEN ◽  
M. WANG ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Spin Valves ◽  
Electrode Spacing ◽  
Half Metallic ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Spin Diffusion Length ◽  
Current Behavior

We report the successful fabrication of lateral organic spin valves (OSVs) using polycrystalline pentacene as spacer and half-metallic La 0.7 Sr 0.3 MnO 3 (LSMO) as two electrodes. The distance between two electrodes ranges from 30 nm to 100 nm. The current–voltage characteristics follow the power law relation, which are attributed to the space charge limited current behavior. The devices with a spacing of 30 nm exhibits clear spin-valve characteristics with a magnetoresistance (MR) ratio of ~ 2% at 9 K. The MR effects disappear for electrode spacing about 100 nm, suggesting that the spin diffusion length is less than 100 nm.

scholarly journals Self-consistent determination of spin Hall angle and spin diffusion length in Pt and Pd: The role of the interface spin loss

2018 ◽  
Vol 4 (6) ◽  
pp. eaat1670 ◽  
Author(s):  
Xinde Tao ◽  
Qi Liu ◽  
Bingfeng Miao ◽  
Rui Yu ◽  
Zheng Feng ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Self Consistent ◽  
Hall Angle ◽  
Spin Diffusion Length

scholarly journals Long Spin Diffusion Length in Few-Layer Graphene Flakes

2016 ◽  
Vol 117 (14) ◽  
Author(s):  
W. Yan ◽  
L. C. Phillips ◽  
M. Barbone ◽  
S. J. Hämäläinen ◽  
A. Lombardo ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Layer Graphene ◽  
Graphene Flakes ◽  
Spin Diffusion Length ◽  
Few Layer Graphene

Spin Pumping in a Ferromagnetic/Nonmagnetic/Spin-Sink Trilayer Film: Spin Current Termination

2012 ◽  
Vol 508 ◽  
pp. 266-270 ◽  
Author(s):  
K. Harii ◽  
Z. Qiu ◽  
T. Iwashita ◽  
Y. Kajiwara ◽  
K. Uchida ◽  
...  
Keyword(s):  
Diffusion Equation ◽  
Hall Effect ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Current ◽  
Interlayer Thickness ◽  
Spin Pumping ◽  
Charge Current ◽  
Inverse Spin Hall Effect ◽  
Spin Diffusion Length

A Spin Current Generated by Spin Pumping in a Ferromagnetic/Nonmagnetic/Spin-Sink Trilayer Film Is Calculated Based on the Spin Pumping Theory and the Standard Spin Diffusion Equation. By Attaching the Spin-Sink Layer, the Injected Spin Current Is Drastically Enhanced when the Interlayer Thickness Is Shorter than the Spin Diffusion Length of the Interlayer. We Also Provided the Formula of the Charge Current which Is Induced from the Pumped Spin Current via the Inverse Spin-Hall Effect.

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