High quality indium gallium arsenide phosphide double heterostructure material grown by the near equilibrium liquid‐phase‐epitaxy technique

P. Besomi; J. Degani; N. K. Dutta; W. R. Wagner; R. J. Nelson

doi:10.1063/1.333825

High quality indium gallium arsenide phosphide double heterostructure material grown by the near equilibrium liquid‐phase‐epitaxy technique

Journal of Applied Physics ◽

10.1063/1.333825 ◽

1984 ◽

Vol 56 (10) ◽

pp. 2879-2882 ◽

Cited By ~ 4

Author(s):

P. Besomi ◽

J. Degani ◽

N. K. Dutta ◽

W. R. Wagner ◽

R. J. Nelson

Keyword(s):

Gallium Arsenide ◽

Liquid Phase ◽

Indium Gallium Arsenide ◽

Liquid Phase Epitaxy ◽

Indium Gallium Arsenide Phosphide ◽

High Quality ◽

Double Heterostructure ◽

Gallium Arsenide Phosphide ◽

Indium Gallium

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Enhanced indium phosphide substrate protection for liquid phase epitaxy growth of indium‐gallium‐arsenide‐phosphide double heterostructure lasers

Journal of Applied Physics ◽

10.1063/1.332107 ◽

1983 ◽

Vol 54 (2) ◽

pp. 535-539 ◽

Cited By ~ 25

Author(s):

P. Besomi ◽

R. B. Wilson ◽

W. R. Wagner ◽

R. J. Nelson

Keyword(s):

Gallium Arsenide ◽

Liquid Phase ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Liquid Phase Epitaxy ◽

Indium Gallium Arsenide Phosphide ◽

Double Heterostructure ◽

Gallium Arsenide Phosphide ◽

Indium Gallium ◽

Substrate Protection

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Optical evaluation of indium gallium arsenide phosphide double‐heterostructure material for injection lasers

Journal of Applied Physics ◽

10.1063/1.331981 ◽

1983 ◽

Vol 54 (12) ◽

pp. 7114-7118 ◽

Cited By ~ 5

Author(s):

J. Degani ◽

P. Besomi ◽

D. P. Wilt ◽

R. J. Nelson ◽

R. B. Wilson

Keyword(s):

Gallium Arsenide ◽

Indium Gallium Arsenide ◽

Indium Gallium Arsenide Phosphide ◽

Double Heterostructure ◽

Gallium Arsenide Phosphide ◽

Indium Gallium ◽

Injection Lasers

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Heat treatment effects on indium gallium arsenide phosphide double heterostructure material

Journal of Applied Physics ◽

10.1063/1.333206 ◽

1984 ◽

Vol 55 (4) ◽

pp. 1135-1138 ◽

Cited By ~ 1

Author(s):

P. Besomi ◽

J. Degani ◽

R. B. Wilson

Keyword(s):

Heat Treatment ◽

Gallium Arsenide ◽

Indium Gallium Arsenide ◽

Treatment Effects ◽

Indium Gallium Arsenide Phosphide ◽

Double Heterostructure ◽

Gallium Arsenide Phosphide ◽

Indium Gallium

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Guided-wave acousto-optic Bragg diffraction in indium gallium arsenide phosphide waveguides

Applied Physics Letters ◽

10.1063/1.119153 ◽

1997 ◽

Vol 70 (24) ◽

pp. 3185-3187 ◽

Cited By ~ 9

Author(s):

C. S. Tsai ◽

B. Sun ◽

A. Kar-Roy

Keyword(s):

Gallium Arsenide ◽

Indium Gallium Arsenide ◽

Guided Wave ◽

Bragg Diffraction ◽

Indium Gallium Arsenide Phosphide ◽

Gallium Arsenide Phosphide ◽

Indium Gallium

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ChemInform Abstract: MATERIAL-SELECTIVE CHEMICAL ETCHING IN THE SYSTEM INDIUM GALLIUM ARSENIDE PHOSPHIDE/INDIUM PHOSPHIDE (INGAASP/INP)

Chemischer Informationsdienst ◽

10.1002/chin.197920013 ◽

1979 ◽

Vol 10 (20) ◽

Author(s):

S. B. PHATAK ◽

G. KELNER

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Chemical Etching ◽

Indium Gallium Arsenide Phosphide ◽

Gallium Arsenide Phosphide ◽

Indium Gallium ◽

Selective Chemical ◽

Selective Chemical Etching

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Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2014.11.023 ◽

2015 ◽

Vol 31 ◽

pp. 52-55 ◽

Cited By ~ 3

Author(s):

D.M. Hurtado-Castañeda ◽

J.L. Herrera-Pérez ◽

J.S. Arias-Cerón ◽

C. Reyes-Betanzo ◽

P. Rodriguez-Fragoso ◽

...

Keyword(s):

Gallium Arsenide ◽

Liquid Phase ◽

Indium Gallium Arsenide ◽

Liquid Phase Epitaxy ◽

Electrical Characterization ◽

Optical Response ◽

Gallium Arsenide Antimonide ◽

Indium Gallium

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ChemInform Abstract: SUBSTRATE ORIENTATION DEPENDENCE OF GROWTH RATE OF INDIUM GALLIUM ARSENIDE/INDIUM PHOSPHIDE GROWN BY LIQUID PHASE EPITAXY

Chemischer Informationsdienst ◽

10.1002/chin.198311006 ◽

1983 ◽

Vol 14 (11) ◽

Author(s):

K. NAKAJIMA ◽

K. AKITA

Keyword(s):

Growth Rate ◽

Gallium Arsenide ◽

Liquid Phase ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Liquid Phase Epitaxy ◽

Orientation Dependence ◽

Substrate Orientation ◽

Indium Gallium

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The composition dependence of the microhardness anisotropy of indium gallium arsenide phosphide

Materials Letters ◽

10.1016/0167-577x(84)90110-1 ◽

1984 ◽

Vol 2 (5) ◽

pp. 355-358 ◽

Cited By ~ 7

Author(s):

D.Y. Watts ◽

A.F.W. Willoughby

Keyword(s):

Gallium Arsenide ◽

Indium Gallium Arsenide ◽

Composition Dependence ◽

Indium Gallium Arsenide Phosphide ◽

Gallium Arsenide Phosphide ◽

Indium Gallium

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Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide

Applied Physics Letters ◽

10.1063/1.91389 ◽

1980 ◽

Vol 36 (12) ◽

pp. 978-980 ◽

Cited By ~ 77

Author(s):

Ernesto H. Perea ◽

Emilio E. Mendez ◽

Clifton G. Fonstad

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Indium Gallium Arsenide Phosphide ◽

Gallium Arsenide Phosphide ◽

Indium Gallium ◽

Lattice Matched

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ChemInform Abstract: CHEMICAL ETCHING OF INDIUM GALLIUM ARSENIDE PHOSPHIDE/INDIUM PHOSPHIDE DH WAFER

Chemischer Informationsdienst ◽

10.1002/chin.198237350 ◽

1982 ◽

Vol 13 (37) ◽

Author(s):

S. ADACHI ◽

Y. NOGUCHI ◽

H. KAWAGUCHI

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Chemical Etching ◽

Indium Gallium Arsenide Phosphide ◽

Gallium Arsenide Phosphide ◽

Indium Gallium

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