Effects of hydrogenation and doping on the conductivity and density of defect states in amorphous silicon

1984 ◽  
Vol 56 (10) ◽  
pp. 2788-2792 ◽  
Author(s):  
N. Savvides
Keyword(s):  
Amorphous Silicon ◽  
Defect States ◽  
Density Of Defect States

Toward a Practical Model of a-Si:H Defects in Intensity-Time-Temperature Space

1994 ◽  
Vol 336 ◽  
Author(s):  
D. Caputo ◽  
J. Bullock ◽  
H. Gleskova ◽  
S. Wagner
Keyword(s):  
Light Intensity ◽  
Fermi Level ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Defect States ◽  
Quasi Fermi Level ◽  
Practical Model ◽  
Density Of Defect States ◽  
Hydrogenated Amorphous

ABSTRACTIn this paper we develop a model of the defect kinetics in hydrogenated Amorphous silicon (a:Si:H) with the goal of predicting the density of defect states g (E) established by any given light intensity I, for arbitrary times t and temperatures T. While we build on widely accepted expressions for the the rates of light-induced and thermal annealing, we examine in more detail the light induced annealing (LIA) term. The model shows that the LIA process can be described with the thermal annealing term if a suitable reduction to the annealing energy is introduced. This reduction depends on the light intensity such as to suggest a relation to the shift of the electron quasi-Fermi level under illumination.

scholarly journals Capacitance Analysis of the Structures with the a-Si:H(i)/c-Si(p) Heterojunction for Solar-Cell Applications

2014 ◽  
Vol 65 (4) ◽  
pp. 254-258 ◽  
Author(s):  
Miroslav Mikolášek ◽  
Ján Jakaboviš ◽  
Vlastimil Řeháček ◽  
Ladislav Harmatha ◽  
Robert Andok
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Amorphous Layer ◽  
Band Offset ◽  
Defect States ◽  
Conduction Band Offset ◽  
Silicon Heterojunction Solar Cell ◽  
Density Of Defect States ◽  
Passivated Silicon

Abstract In this paper we present the capacitance study of the intrinsic amorphous silicon/crystalline silicon heterostructure with the aim to gain insight on the heterointerface properties of a passivated silicon heterojunction solar cell. It is shown that due to the high density of defect states in the amorphous layer the structure has to be analyzed as a heterojunction. Using the analysis, the following values have been determined: conduction-band offset of 0.13 eV, electron affinity of 3.92 eV, and density of defect states in the intrinsic amorphous silicon being that of 4.14 X 1021m—3.

Amorphous Silicon Thin Film Transistors and Memory Devices

1985 ◽  
Vol 49 ◽  
Author(s):  
P.G. Lecomber
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Field Effect Transistors ◽  
Memory Devices ◽  
Preparation Technique ◽  
Defect States ◽  
Large Area ◽  
Silicon Thin Film ◽  
Simple Logic ◽  
Density Of Defect States

AbstractThe preparation of amorphous silicon with a low density of defect states by the glow discharge decomposition of silane and the ability to control its electrical conductivity over many orders of magnitude by the addition of phosphine or diborane to the silane, stimulated a worldwide interest in this material and in its possible applications. This paper begins with a description of the preparation technique and a brief review of some of the important properties of the material. The fabrication and characteristics of a-Si thin-film field effect transistors will be described and followed by a discussion of the applications of these devices in large area liquid crystal displays, in simple logic circuits and in addressable image sensors. Finally, the use of a-Si in memory devices will be briefly described.

Ion Irradiated Amorphous Silicon: A Model Approach to Dynamics of Defect Creation and Annihilation

1993 ◽  
Vol 311 ◽  
Author(s):  
Jung H. Shin ◽  
Harry A. Atwater
Keyword(s):  
Activation Energy ◽  
Energy Spectrum ◽  
Amorphous Silicon ◽  
Quantitative Agreement ◽  
Defect States ◽  
Experimental Activation Energy ◽  
Density Of Defect States ◽  
First Time ◽  
Recombination Kinetics ◽  
Model Approach

ABSTRACTThe dynamics of defect annihilation and creation in amorphous silicon (a-Si) are measured in detail using defect-related changes in the electrical conductivity of a-Si A model is proposed which for the first time can track the complete time evolution of defect population across the activation energy spectrum with explicit dependence on irradiation and annealing parameters. The model is based upon experimental activation energy spectrum, bimolecular recombination kinetics, and on the notion of a maximum density of defect states beyond which no additional defects can be supported. The new model predicts transient dynamics in defect population and describes structure of the defect population in detail. Its predictions are in good qualitative agreement, and in reasonable quantitative agreement with experimental data.

The Instability Characteristics of Amorphous Silicon Thin Film Transistors with Various Interfacial and Bulk Defect States

1997 ◽  
Vol 36 (Part 1, No. 10) ◽  
pp. 6226-6229 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Jun-Wei Tsai ◽  
Chun-Yao Huang ◽  
Fang-Chen Luo ◽  
Hsing-Chien Tuan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Defect States ◽  
Silicon Thin Film

Defect states in the intrinsic layer of amorphous silicon solar cells studied by the constant-photocurrent method

1998 ◽  
Vol 77 (4) ◽  
pp. 1049-1061 ◽  
Author(s):  
Petr Sládek ◽  
Pavel Sťahel ◽  
Pere Roca I. Cabarrocas ◽  
Philippe Morin
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Defect States

Investigation of the off-current in amorphous silicon thin film transistors for SiO2 and SiNx. gate insulators

1996 ◽  
Vol 424 ◽  
Author(s):  
Jeong Hyun Kim ◽  
Woong Sik Choi ◽  
Chan Hee Hong ◽  
Hoe Sup Soh
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Gate Insulator ◽  
Defect States ◽  
Silicon Thin Film ◽  
Pressure Chemical

AbstractThe off current behavior of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with an atmospheric pressure chemical vapor deposition (APCVD) silicon dioxide (SiO2) gate insulator were investigated at negative gate voltages. The a-Si:H TFT with SiO2 gate insulator has small off currents and large activation energy (Ea) of the off current compared to the a-Si:H TFT with SiNx gate insulator. The holes induced in the channel by negative gate voltage seem to be trapped in the defect states near the a-Si:H/SiO2 interface. The interface state density in the lower half of the band gap of a-Si:H/SiO2 appears to be much higher than that for a-Si:H/SiNx.

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