Characterization of a multipole ion source for ion implantation

1984 ◽  
Vol 56 (1) ◽  
pp. 96-100 ◽  
Author(s):  
D. Cope ◽  
J. H. Keller
Keyword(s):  
Ion Implantation ◽  
Ion Source

Characterization of Thin Layers of Metal Clusters Embedded in Silica Glass Formed by High Dose Ion Implantation

2000 ◽  
Vol 647 ◽  
Author(s):  
P.S. Chung ◽  
S.P. Wong ◽  
W.Y. Cheung ◽  
N. Ke ◽  
W.K. Lee ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silica Glass ◽  
Metal Clusters ◽  
Ion Source ◽  
Thin Layers ◽  
Optical Measurements ◽  
Visible Range ◽  
Infrared Range ◽  
High Dose

AbstractThin layers of metal clusters in silica glass were formed by high dose ion implantation of Ag, Ni and Cu using a metal vapor vacuum arc (MEVVA) ion source. Characterization of the implanted layers was performed using Rutherford backscattering spectroscopy, transmission electron microscopy, x-ray diffraction, and optical measurements. The nonlinear optical properties of the implanted samples were studied by the z-scan method, using a self mode-locked Ti: sapphire laser delivering linearly polarized pulses of 130fs long at a wavelength of 790nm at 76MHz. The variation of the intensity-dependent refractive index n2 with the ion species and the implantation conditions were studied. An n2 value of about 0.6 cm2/GW was measured for one of the Cu and Ni co-implanted samples. The correlation between n2 and the cluster size was also analyzed. Ellipsometry spectra of the samples were measured in the visible range from 0.4 to 0.7 [.proportional]m and in the near infrared range from 0.9 to 1.6 [.proportional]m. Preliminary results are reported on our attempt to deduce the effective complex refractive indices of the implanted layers by fitting of the ellipsometry spectra using a simple single uniform layer on substrate model and the Maxwell-Garnett effective medium approximation.

Formation and characterization of Si5C3 type silicon carbide by carbon ion implantation with a MEVVA ion source

2007 ◽  
Vol 61 (19-20) ◽  
pp. 4083-4085 ◽  
Author(s):  
L.B. Guo ◽  
Y.L. Wang ◽  
F. Song ◽  
F. He ◽  
Y. Huang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Ion Source ◽  
Carbon Ion ◽  
Type Silicon

FORMATION AND CHARACTERIZATION OF 3C-SIC BY CARBON-ION IMPLANTATION INTO SILICON WITH A MEVVA ION SOURCE

2007 ◽  
Vol 14 (06) ◽  
pp. 1103-1106 ◽  
Author(s):  
Y. Z. WAN ◽  
G. Y. XIONG ◽  
F. SONG ◽  
H. L. LUO ◽  
Y. HUANG ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Ion Implantation ◽  
Ion Source ◽  
Silicon Substrates ◽  
Surface Layers ◽  
Raman Analysis ◽  
Carbon Ion ◽  
Cubic Silicon Carbide ◽  
Ion Implanted

Crystalline cubic silicon carbide ( 3C - SiC ) surface layers have been prepared by carbon-ion implantation into silicon (100) using a MEVVA ion source and subsequent annealing at 1250°C for 2 h. The obtained films have been characterized by SEM, XRD, and micro-Raman analysis. The effect of carbon-ion dose on the surface morphology of the ion-implanted samples has been investigated. Rectangular patterns are observed on the surfaces of carbon-ion-implanted silicon substrates. It is found that the amount of rectangular patterns increases with ion dose, suggesting the dependence of surface morphology on ion dose. The formation of rectangular patterns has been elucidated in this paper.

Optical, electrical, and chemical characterization of nanostructured InxGa1-xN formed by high fluence In+ ion implantation into GaN

2020 ◽  
pp. 110541
Author(s):  
C.A. Hernández-Gutiérrez ◽  
Yuriy Kudriavtsev ◽  
Dagoberto Cardona ◽  
A.G. Hernández ◽  
J.L. Camas-Anzueto
Keyword(s):  
Ion Implantation ◽  
Chemical Characterization ◽  
High Fluence

Metal Ion Source for Ion Implantation System

1972 ◽  
Vol 11 (8) ◽  
pp. 1192-1198 ◽  
Author(s):  
Keizo Shimizu ◽  
Hisazo Kawakatsu ◽  
Koichi Kanaya
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Ion Source

Fourier transform infra-red characterization of carbon onions produced by carbon-ion implantation

1998 ◽  
Vol 285 (3-4) ◽  
pp. 216-220 ◽  
Author(s):  
T. Cabioc'h ◽  
A. Kharbach ◽  
A. Le Roy ◽  
J.P. Rivière
Keyword(s):  
Fourier Transform ◽  
Ion Implantation ◽  
Carbon Ion ◽  
Infra Red ◽  
Carbon Onions
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