Characterization of an RF plasma ion source for ion implantation

2012 ◽  
Author(s):  
Peter M. Kopalidis ◽  
Zhimin Wan
Keyword(s):  
Ion Implantation ◽  
Ion Source ◽  
Rf Plasma ◽  
Plasma Ion Source

Negative-Ion Implantation

1994 ◽  
Vol 354 ◽  
Author(s):  
Junzo Ishikawa
Keyword(s):  
Ion Implantation ◽  
Negative Ions ◽  
Ion Source ◽  
Negative Ion ◽  
Rf Plasma ◽  
Ion Currents ◽  
Promising Technique ◽  
Surface Charging ◽  
Silicon Carbon ◽  
A Charge

AbstractNegative-ion implantation is a promising technique for forthcoming ULSI (more than 256 M bits) fabrication and TFT (for color LCD) fabrication, since the surface charging voltage of insulated electrodes or insulators implanted by negative ions is found to saturate within so few as several volts, no breakdown of insulators would be expected without a charge neutralizer in these fabrication processes. Scatter-less negative-ion implantation into powders is also possible. For this purpose an rf-plasma-sputter type heavy negative-ion source was developed, which can deliver several milliamperes of various kinds of negative ion currents such as boron, phosphor, silicon, carbon, copper, oxygen, etc. A medium current negative-ion implanter with a small version of this type of ion source has been developed.

DEVELOPMENT OF LONG LIFETIME AND HIGH INTENSITY NANOCLUSTER ION SOURCE BY PLASMA-GAS-AGGREGATION

2005 ◽  
Vol 19 (15n17) ◽  
pp. 2327-2332
Author(s):  
MASASHI IMANAKA ◽  
HIDEYUKI ARAI ◽  
TAKAHIDE NAKAGAWA ◽  
YUKIMITSU OHSHIRO ◽  
SHIN-ICHI WATANABE
Keyword(s):  
Ion Implantation ◽  
Mass Distribution ◽  
Mass Spectrometer ◽  
High Intensity ◽  
Ion Source ◽  
Beam Intensity ◽  
Large Area ◽  
Weak Beam ◽  
Long Lifetime ◽  
Plasma Ion Source

We have constructed a magnetron nanocluster ion source by plasma-gas-aggregations. Using the magnetron type nanocluster ion source and TOF mass spectrometer, we measured the mass distribution of boron nanoclusters. In these experiments, we detected nanocluster of [Formula: see text] while the peaks around these masses cannot be resolved. Although magnetron type nanocluster source is useful tool, it has a weak beam intensity and short lifetime for using as an ion source of nanocluster ion implantation, which is one of the important applications for the nanocluster ion source. For this reason, we are constructing and developing a new nanocluster ion source (waveguide-surfatron nanocluster ion source). The new nanocluster ion source consists a large area plasma ion source and gas aggregation cell instead of present nanocluster ion source configuration (magnetron type nanocluster ion source).

Characterization of Thin Layers of Metal Clusters Embedded in Silica Glass Formed by High Dose Ion Implantation

2000 ◽  
Vol 647 ◽  
Author(s):  
P.S. Chung ◽  
S.P. Wong ◽  
W.Y. Cheung ◽  
N. Ke ◽  
W.K. Lee ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silica Glass ◽  
Metal Clusters ◽  
Ion Source ◽  
Thin Layers ◽  
Optical Measurements ◽  
Visible Range ◽  
Infrared Range ◽  
High Dose

AbstractThin layers of metal clusters in silica glass were formed by high dose ion implantation of Ag, Ni and Cu using a metal vapor vacuum arc (MEVVA) ion source. Characterization of the implanted layers was performed using Rutherford backscattering spectroscopy, transmission electron microscopy, x-ray diffraction, and optical measurements. The nonlinear optical properties of the implanted samples were studied by the z-scan method, using a self mode-locked Ti: sapphire laser delivering linearly polarized pulses of 130fs long at a wavelength of 790nm at 76MHz. The variation of the intensity-dependent refractive index n2 with the ion species and the implantation conditions were studied. An n2 value of about 0.6 cm2/GW was measured for one of the Cu and Ni co-implanted samples. The correlation between n2 and the cluster size was also analyzed. Ellipsometry spectra of the samples were measured in the visible range from 0.4 to 0.7 [.proportional]m and in the near infrared range from 0.9 to 1.6 [.proportional]m. Preliminary results are reported on our attempt to deduce the effective complex refractive indices of the implanted layers by fitting of the ellipsometry spectra using a simple single uniform layer on substrate model and the Maxwell-Garnett effective medium approximation.

Formation and characterization of Si5C3 type silicon carbide by carbon ion implantation with a MEVVA ion source

2007 ◽  
Vol 61 (19-20) ◽  
pp. 4083-4085 ◽  
Author(s):  
L.B. Guo ◽  
Y.L. Wang ◽  
F. Song ◽  
F. He ◽  
Y. Huang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Ion Source ◽  
Carbon Ion ◽  
Type Silicon
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