Intensity dependence of the minority‐carrier diffusion length in amorphous silicon based alloys

1984 ◽  
Vol 55 (8) ◽  
pp. 2967-2971 ◽  
Author(s):  
M. Hack ◽  
M. Shur
Keyword(s):  
Amorphous Silicon ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion ◽  
Intensity Dependence ◽  
Silicon Based

Surface Photovoltage Measurement of Minority Carrier Diffusion Lengths Exceeding Wafer Thickness: Application to Iron Monitoring with Part Per Quadrillion Sensitivity

1993 ◽  
Vol 324 ◽  
Author(s):  
A.M. Kontkiewicz ◽  
J. Lagowski ◽  
M. Dexter ◽  
P. Edelman
Keyword(s):  
Minority Carrier ◽  
Diffusion Length ◽  
Iron Concentration ◽  
Wavelength Dependence ◽  
Surface Photovoltage ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion ◽  
Wafer Thickness ◽  
L Value ◽  
Silicon Based

AbstractWe discuss an approach to iron concentration determination in silicon, based on wafer-scale surface photovoltage measurement of the minority carrier diffusion length in the millimeter range. The approach combines two novel aspects: it overcomes the diffusion length to wafer thickness ratio limitation of previous SPV methods, and it employs iron separation from other recombination centers using rapid photo-dissociation of iron-boron pairs. The wafer thickness limitation was eliminated by using the correct theoretical SPV wavelength dependence instead of simplified asymptotic diffusion length form adopted in all previous treatments and valid only for diffusion lengths much shorter than the wafer thickness. Photo-dissociation of Fe-B pairs and measurement of the corresponding decrease of the L value (caused by creation of iron intersticials) enables iron detection in typical silicon wafers in times of seconds with a sensitivity in the low 108 atoms/cm3 range.

Surface recombination effects on minority carrier diffusion length measurements using electron beam-induced current

1990 ◽  
Vol 48 (4) ◽  
pp. 744-745
Author(s):  
D.P. Malta ◽  
M.L. Timmons
Keyword(s):  
Electron Beam ◽  
Beam Energy ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Effective Diffusion ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Logarithmic Scale ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

Measurement of the minority carrier diffusion length (L) can be performed by measurement of the rate of decay of excess minority carriers with the distance (x) of an electron beam excitation source from a p-n junction or Schottky barrier junction perpendicular to the surface in an SEM. In an ideal case, the decay is exponential according to the equation, I = Ioexp(−x/L), where I is the current measured at x and Io is the maximum current measured at x=0. L can be obtained from the slope of the straight line when plotted on a semi-logarithmic scale. In reality, carriers recombine not only in the bulk but at the surface as well. The result is a non-exponential decay or a sublinear semi-logarithmic plot. The effective diffusion length (Leff) measured is shorter than the actual value. Some improvement in accuracy can be obtained by increasing the beam-energy, thereby increasing the penetration depth and reducing the percentage of carriers reaching the surface. For materials known to have a high surface recombination velocity s (cm/sec) such as GaAs and its alloys, increasing the beam energy is insufficient. Furthermore, one may find an upper limit on beam energy as the diameter of the signal generation volume approaches the device dimensions.

Study of the spatial distribution of minority carrier diffusion length in epiplanar detector structures

2015 ◽  
Vol 23 (4) ◽  
Author(s):  
T. Piotrowski ◽  
M. Węgrzecki ◽  
M. Stolarski ◽  
T. Krajewski
Keyword(s):  
Spatial Distribution ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Silicon Detector ◽  
Monochromatic Radiation ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion ◽  
Spot Diameter ◽  
Photoelectric Current ◽  
Effective Carrier

AbstractOne of the key parameters determining detection properties of silicon PIN detector structures (pThe paper presents a method for measuring the spatial distribution of effective carrier diffusion length in silicon detector structures, based on the measurement of photoelectric current of a non-polarised structure illuminated (spot diameter of 250 μm) with monochromatic radiation of two wavelengths λ

scholarly journals Measuring the minority carrier diffusion length in n-GaN using bulk STEM EBIC

2018 ◽  
Vol 24 (S1) ◽  
pp. 1842-1843
Author(s):  
Zoey Warecki ◽  
Vladimir Oleshko ◽  
Kimberlee Celio ◽  
Andrew Armstrong ◽  
Andrew Allerman ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion
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