Oxygen‐enhanced thermionic emission pattern of hemispherical single‐crystal LaB6

1984 ◽  
Vol 55 (5) ◽  
pp. 1379-1387 ◽  
Author(s):  
R. Shimizu ◽  
H. Onoda ◽  
H. Hashimoto ◽  
H. Hagiwara
1981 ◽  
Vol 52 (10) ◽  
pp. 6316-6321 ◽  
Author(s):  
R. Shimizu ◽  
H. Onoda ◽  
H. Hagiwara ◽  
S. Ishii

2011 ◽  
Vol 28 (8) ◽  
pp. 088101 ◽  
Author(s):  
Li-Hong Bao ◽  
Jiu-Xing Zhang ◽  
Shen-Lin Zhou ◽  
Ning Zhang ◽  
Hong Xu

2018 ◽  
Vol 33 (9) ◽  
pp. 981 ◽  
Author(s):  
WANG Yan ◽  
ZHANG Jiu-Xing ◽  
YANG Xin-Yu ◽  
ZHAO Jing-Jing ◽  
NING Shu-Yu ◽  
...  

Author(s):  
Ken Harada ◽  
Haruto Nagata ◽  
Ryuichi Shimizu ◽  
Takayoshi Tanji ◽  
Keiji Yada

Thermal field emission (T.F.E.) properties of single crystal LaB6 -tips has been investigated by observing emission patterns. Applying field evaporation technique we succeeded to get the clean pattern consisting of <310> spots with very good reproducibility. This investigation has led to conclusion;, the <310> spot is promising electron source of high brightness provided that the tip is operated at tip temperature∽ 1000-1050°C in vacuum of 10−9 Torr region.As a preliminary experiment of brightness-measurement, we mounted the <310> LaB6-tip in a commercial type TEM, JEM-100CX-FEG, attached with an electron gun system for T.F.E. of <100> W-tip, being operated at 10−9 Torr region without Schottky shield electrode. The LaB6-tip, however, can not be operated without the Schottky shield because thermionic emission (T.E.) from the LaB6-tip is considerably high even though the tip is operated at lower than ∽1000 °C. In the present experiment, therefore, we manufactured a Schottky shield electrode as shown in Fig.l and performed the measurement of brightness by setting the Schottky shield electrode, applied the same voltage as the tip since the electron gun system has no extra feed-throughs for bias-voltage.


1992 ◽  
Vol 279 ◽  
Author(s):  
D. L. Carroll ◽  
D. L. Doering ◽  
P. Xiong-Skiba

ABSTRACTElectron beam irradiation of oxides produces electron trapping states which store excess charge. Thermionic emission of this charge occurs during heating with emission peak temperatures related to binding mechanisms and energies. We present thermionic emission results which show both intrinsic and beam induced trapping states in OC-Al2O3 (sapphire) and sintered alumina. Five states have been identified with thermionic emission peaks at temperatures between -50°C and 500°C. Two states are electron beam induced and occur only for electron beam energies above fixed thresholds. These thresholds appear to correlate to with the Is core electron binding energies for oxygen and aluminum. The emission peaks from the sintered material are about 10 fold greater in intensity and slightly broadened in comparison to the single crystal. This suggests that structure plays an important role in charge trapping. Emission was also extremely sensitive to sample treatments such as annealing before electron irradiation.


2020 ◽  
Vol 12 (23) ◽  
pp. 26534-26542
Author(s):  
Hugo Dominguez-Andrade ◽  
Julian Anaya ◽  
Alex Croot ◽  
Mattia Cattelan ◽  
Daniel J. Twitchen ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document