Charge injection into SiO2during field effect and photo‐field‐effect measurements in hydrogenated amorphous silicon

1984 ◽  
Vol 55 (2) ◽  
pp. 440-445 ◽  
Author(s):  
J. Vaid ◽  
H. Fritzsche
Keyword(s):  
Amorphous Silicon ◽  
Field Effect ◽  
Hydrogenated Amorphous Silicon ◽  
Charge Injection ◽  
Hydrogenated Amorphous

Effect of Contacts on Capacitance Transient Measurements in N-Type Hydrogenated Amorphous Silicon

1995 ◽  
Vol 377 ◽  
Author(s):  
W. B. Jackson ◽  
N. M. Johnson ◽  
J. Walker
Keyword(s):  
Amorphous Silicon ◽  
Pulse Duration ◽  
Ohmic Contacts ◽  
Hydrogenated Amorphous Silicon ◽  
Charge Injection ◽  
Current Injection ◽  
Anomalous Dependence ◽  
Capacitance Transient ◽  
Hydrogenated Amorphous ◽  
Transient Measurements

ABSTRACTMeasurement of the dependence of emission capacitance transients on filling pulse duration has been extended to devices with Ohmic back contacts. Capacitance transients on devices possessing identical bulk 20-ppm P doped a-Si:H but either Ohmic contacts or blocking contacts were compared. The devices with blocking contacts completely reproduced in quantitative detail the previously observed anomalous dependence of capacitance transients on filling pulse duration. The diodes with Ohmic contacts showed no evidence of the anomalous filling pulse effect even for light-degraded, resistive samples. Current injection measurements show that blocking contacts delay the charge injection into the device by about 10–100 msec.

Low Temperature Characteristics of Hydrogenated Amorphous Silicon Field Effect Transistors

1989 ◽  
Vol 149 ◽  
Author(s):  
Byung-Seong Bae ◽  
Deok-Ho Cho ◽  
Jae-Hee Lee ◽  
Choochon Lee ◽  
Jin Jang
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Field Effect Mobility ◽  
Temperature Dependent ◽  
Hydrogenated Amorphous ◽  
Very Low Temperature

ABSTRACTWe investigated the temperature dependent characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT's) at temperatures down to 20 K. With decreasing temperature, the threshold voltage increased, the field effect mobility and the on-current decreased. The measured on-currents versus inverse temperature above 80 K are represented as the sum of two exponentially varied currents. It is concluded that on-current is nearest-neighbour hopping between 120 K and 80 K. Below this temperature, the temperature dependence of on-current is explained by variable range hopping and below about 30 K on-current becomes nearly independent of temperature. At very low temperature hopping probability may be governed not by temperature but by temperature independent tunneling, depending on the overlap of the wave function. The explanation of threshold voltage increase at low temperature is given.

A Junction Field Effect Transistor Based on Hydrogenated Amorphous Silicon

2000 ◽  
Vol 609 ◽  
Author(s):  
D. Caputo ◽  
G. de Cesare ◽  
A. Nascetti ◽  
V. Kellezi ◽  
F. Palma
Keyword(s):  
Amorphous Silicon ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Gate Electrode ◽  
Linear Behavior ◽  
First Results ◽  
Effect Transistor ◽  
Hydrogenated Amorphous

ABSTRACTAn hydrogenated amorphous silicon junction field effect transistor suitable for analog and digital applications is presented. The device is constituted by a p+ - i - n− junction, with the drain and source contacts patterned on the n-doped layer and the gate electrode patterned on the p+ doped layer. As in the crystalline case, the device is a voltage-controlled resistor, and its drain-source resistance can be varied, with a voltage applied to the gate electrode, by modulating the width of the depletion layer extending into the n-type channel.The doping value of this layer has been chosen as a trade-off between high value of channel conductivity and a relatively low defect density in the material. The manufactured device, with W/L=5000/200 μm, shows the typical current-voltage curves of a JFET. In particular, at low VDS, the current presents the linear behavior of the triode zone, where the JFET operates as a linear resistance whose value is controlled by the gate voltage. At higher VDS the JFET works in the pinch-off region as a dependent current generator.First results are very encouraging, since we have achieved transconductance values of 10−6 V/A, which are comparable to those of state of the art TFT.

Sign in / Sign up

Export Citation Format

Share Document