Dispersive charge injection model for hydrogenated amorphous silicon/amorphous silicon dioxide thin‐film transistor instability

1991 ◽  
Vol 59 (7) ◽  
pp. 826-828 ◽  
Author(s):  
G. Fortunato ◽  
L. Mariucci ◽  
C. Reita
Keyword(s):  
Thin Film ◽  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Hydrogenated Amorphous Silicon ◽  
Charge Injection ◽  
Amorphous Silicon Dioxide ◽  
Injection Model ◽  
Hydrogenated Amorphous

A High-Voltage Hydrogenated Amorphous Silicon Thin-Film Transistor for Reflective Active-Matrix Cholesteric LCD

1999 ◽  
Vol 558 ◽  
Author(s):  
J.Y. Nahm ◽  
J.H. Lan ◽  
J. Kanicki
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Double Layer ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Hydrogenated Amorphous Silicon ◽  
Gate Insulator ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Hydrogenated Amorphous

ABSTRACTA high-voltage hydrogenated amorphous silicon thin film transistor (H-V a-Si:H TFT) with thick double layer gate insulator (∼0.95 μm) has been developed for reflective active-matrix cholesteric liquid crystal displays. The double layer gate insulator consists of 0.85 and 0.10 μm thick benzocyclobutene and hydrogenated amorphous silicon nitride, respectively. This HV a-Si:H TFT operates at the gate-tosource and drain-to-source biases up to 100V without any serious leakage current degradation and device breakdown.

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