Residual strains in amorphous silicon films measured by x‐ray double crystal topography

1984 ◽  
Vol 55 (2) ◽  
pp. 375-377 ◽  
Author(s):  
C. L. Kuo ◽  
P. E. Vanier ◽  
J. C. Bilello
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
Double Crystal ◽  
X Ray ◽  
Residual Strains

The Influence of X-Ray Irradiation on Structural Relaxation and Crystallization of Amorphous Silicon Films

1998 ◽  
Vol 37 (Part 1, No. 11) ◽  
pp. 5890-5893 ◽  
Author(s):  
Shunsuke Muto ◽  
Yumiko Kobayashi ◽  
Kin Man Yu ◽  
Wladyslaw Walukiewicz ◽  
Charles J. Echer ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Structural Relaxation ◽  
Silicon Films ◽  
X Ray

scholarly journals INVESTIGATION OF LATTICE DEFORMATION OF POROUS SILICON FILMS BY X-RAY DOUBLE CRYSTAL DIFFRACTION

1993 ◽  
Vol 42 (6) ◽  
pp. 954
Author(s):  
HE XIAN-CHANG ◽  
WU ZI-QIN ◽  
ZHAO TE-XIU ◽  
Lü ZHI-HUI ◽  
WANG XIAO-PING ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Films ◽  
Lattice Deformation ◽  
Double Crystal ◽  
X Ray

scholarly journals Reciprocal Space Analysis of the Microstructure of Luminescent and Nonluminescent Porous Silicon Films

1994 ◽  
Vol 358 ◽  
Author(s):  
S.R. Lee ◽  
J.C. Barbour ◽  
J.W. Medernach ◽  
J.O. Stevenson ◽  
J.S. Custer
Keyword(s):  
Porous Silicon ◽  
Space Structure ◽  
Reciprocal Space ◽  
Silicon Films ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Crystalline Materials ◽  
X Ray ◽  
Space Analysis ◽  
Spatially Correlated

ABSTRACTThe microstructure of anodically prepared porous silicon films was determined using a novel x-ray diffraction technique. This technique uses double-crystal diffractometry combined with position-sensitive x-ray detection to efficiently and quantitatively image the reciprocal space structure of crystalline materials. Reciprocal space analysis of newly prepared, as well as aged, p+ porous silicon films showed that these films exhibit a very broad range of crystallinity. This material appears to range in structure from a strained, single-crystal, sponge-like material exhibiting long-range coherency to isolated, dilated nanocrystals embedded in an amorphous matrix. Reciprocal space analysis of n+ and p+ porous silicon showed these materials are strained single-crystals with a spatially-correlated array of vertical pores. The vertical pores in these crystals may be surrounded by nanoporous or nanocrystalline domains as small as a few nm in size which produce diffuse diffraction indicating their presence. The photoluminescence of these films was examined using 488 nm Ar laser excitation in order to search for possible correlations between photoluminescent intensity and crystalline microstructure.

Crystallization study of chemically vapour-deposited amorphous silicon films by in situ x-ray diffraction

1985 ◽  
Vol 124 (2) ◽  
pp. 171-177 ◽  
Author(s):  
R. Bisaro ◽  
N. Proust ◽  
J. Magariño ◽  
K. Zellama
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystallization Study

HYDROGEN PROFILING IN GAS PHASE DOPED AND ION IMPLANTED AMORPHOUS SILICON FILMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
F. J. Demond ◽  
G. Müller ◽  
H. Damjantschitsch ◽  
H. Mannsperger ◽  
S. Kalbitzer ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Gas Phase ◽  
Silicon Films ◽  
Ion Implanted

A DOUBLE CRYSTAL MONOCHROMATOR FOR SOFT X-RAY BEAM LINE OF UVSOR

1986 ◽  
Vol 47 (C8) ◽  
pp. C8-135-C8-137
Author(s):  
T. MURATA ◽  
T. MATSUKAWA ◽  
M. MORI ◽  
M. OBASHI ◽  
S.-I. NAO-E ◽  
...  
Keyword(s):  
Beam Line ◽  
Double Crystal ◽  
X Ray ◽  
Double Crystal Monochromator
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