Defect‐related emissions in photoluminescence spectra of AlxGa1−xAs grown by molecular beam epitaxy

1984 ◽  
Vol 55 (10) ◽  
pp. 3765-3768 ◽  
Author(s):  
M. Mihara ◽  
Y. Nomura ◽  
M. Mannoh ◽  
K. Yamanaka ◽  
S. Naritsuka ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Spectra

Photoluminescence spectra of oxygen-doped ZnSe grown by molecular-beam epitaxy

1989 ◽  
Vol 39 (5) ◽  
pp. 3138-3144 ◽  
Author(s):  
Katsuhiro Akimoto ◽  
Takao Miyajima ◽  
Yoshifumi Mori
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Spectra

Photoluminescence spectra of undoped GaAs grown by molecular‐beam epitaxy at very high and low substrate temperatures

1986 ◽  
Vol 59 (3) ◽  
pp. 888-891 ◽  
Author(s):  
Kazuhiro Kudo ◽  
Yunosuke Makita ◽  
Ichiro Takayasu ◽  
Toshio Nomura ◽  
Toshihiko Kobayashi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Spectra ◽  
Substrate Temperatures ◽  
Very High ◽  
Undoped Gaas

Photoluminescence spectra of GaN films grown at low temperature by compound-source molecular beam epitaxy

2006 ◽  
Vol 3 (6) ◽  
pp. 1870-1873
Author(s):  
Tohru Honda ◽  
Masaru Sawada ◽  
Toshiaki Kobayashi ◽  
Shinichi Egawa ◽  
Yohta Aoki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Photoluminescence Spectra

Picosecond transient photoluminescence spectra of ZnSe‐ZnS strained‐layer superlattices grown on GaAs(001) by molecular beam epitaxy

1992 ◽  
Vol 61 (13) ◽  
pp. 1540-1542 ◽  
Author(s):  
Jie Cui ◽  
Hai‐Long Wang ◽  
Fu‐Xi Gan ◽  
Xu‐Guang Huang ◽  
Zhi‐Gang Cai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Spectra ◽  
Strained Layer ◽  
Strained Layer Superlattices
Sign in / Sign up

Export Citation Format

Share Document