Photoluminescence spectra of GaN films grown at low temperature by compound-source molecular beam epitaxy

2006 ◽  
Vol 3 (6) ◽  
pp. 1870-1873
Author(s):  
Tohru Honda ◽  
Masaru Sawada ◽  
Toshiaki Kobayashi ◽  
Shinichi Egawa ◽  
Yohta Aoki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Photoluminescence Spectra

Study of photoluminescence spectra of GaMnAs produced by low-temperature molecular beam epitaxy

2007 ◽  
Vol 41 (10) ◽  
pp. 1145-1149 ◽  
Author(s):  
P. B. Parchinskiy ◽  
A. Yu. Bobylev ◽  
S. I. Vlasov ◽  
Fu Chen Yu ◽  
Do Jin Kim
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Photoluminescence Spectra

Formation of a New Blue-Shift Emission in Highly Be-Doped GaAs Grown by Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
Yunosuke Makita ◽  
Masahiko Mori ◽  
Nobukazu Ohnishi ◽  
Paul Phelan ◽  
Takashi Taguchi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Blue Shift ◽  
Band Edge ◽  
Photoluminescence Spectra ◽  
Acceptor Concentration

ABSTRACTPhotoluminescence measurements of Be-doped GaAs, grown by molecular beam epitaxy, were carried out at low temperature as a function of acceptor concentration. Results revealed that besides the well-defined emission, [g-g], which is exclusively relevant to acceptor impurities, an additional specific emission, temporarily denoted by [g-g]α is formed near the band-edge, when the concentration of acceptors exceeds 1×1019 cm−3:. From the viewpoint of application it was suggested that also in case of acceptors, photoluminescence spectra can be practically used for the precise determina-tion the acceptor concentration.

Photoluminescence spectra of oxygen-doped ZnSe grown by molecular-beam epitaxy

1989 ◽  
Vol 39 (5) ◽  
pp. 3138-3144 ◽  
Author(s):  
Katsuhiro Akimoto ◽  
Takao Miyajima ◽  
Yoshifumi Mori
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Spectra

High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy

2010 ◽  
Vol 97 (19) ◽  
pp. 192501 ◽  
Author(s):  
Y. Maeda ◽  
K. Hamaya ◽  
S. Yamada ◽  
Y. Ando ◽  
K. Yamane ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Quality

Local structures around Er atoms doped in GaAs by low-temperature molecular beam epitaxy

2003 ◽  
Vol 6 (5-6) ◽  
pp. 425-427 ◽  
Author(s):  
K. Ogawa ◽  
H. Ofuchi ◽  
H. Maki ◽  
T. Sonoyama ◽  
D. Inoue ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Local Structures

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

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