Effect of surface relaxation on stress failure in laser‐irradiated glass

1983 ◽  
Vol 54 (7) ◽  
pp. 3769-3776 ◽  
Author(s):  
Jad H. Batteh
Keyword(s):  
Surface Relaxation ◽  
Effect Of Surface

Modelling the morphology of minerals by computer

1995 ◽  
Vol 59 (397) ◽  
pp. 607-615 ◽  
Author(s):  
A. L. Rohl ◽  
D. H. Gay
Keyword(s):  
Basal Plane ◽  
Computer Code ◽  
Surface Relaxation ◽  
Complete Agreement ◽  
Growth Morphology ◽  
Bulk Properties ◽  
Hartree Fock ◽  
Surfaces And Interfaces ◽  
First Time ◽  
Effect Of Surface

AbstractA new computer code (MARVIN) has been developed for the simulation of surfaces and interfaces. The models and methodologies employed within the program are briefly discussed. One application of the code, calculating crystal morphologies, is explored using zircon, quartz and α-Al2O3 as examples. The new code enables the use of covalent type force fields and the effect of surface relaxation on the growth morphology to be calculated for the first time. It is found that relaxation does affect the attachment energy but not by a large enough amount to significantly change the growth morphology for the three examples discussed here. Finally, the calculated surface relaxation for the basal plane of α-Al2O3 is found to be in complete agreement with Hartree-Fock ab initio calculations, verifying that the potentials, which are derived from bulk properties, transfer well to this surface.

Effect of Surface Relaxation on Characteristics of Nanomachined Surface

2011 ◽  
Vol 211-212 ◽  
pp. 742-746
Author(s):  
Yu Lan Tang ◽  
Ya Ting He ◽  
Guo Zhi Liu ◽  
Jing Xiang Fu ◽  
Hong Sun ◽  
...  
Keyword(s):  
Residual Stress ◽  
Surface Energy ◽  
Mechanical Systems ◽  
Surface Hardness ◽  
Surface Relaxation ◽  
Surface Residual Stress ◽  
Machined Surface ◽  
Micro Electro Mechanical Systems ◽  
Machined Parts ◽  
Effect Of Surface

With the development of Micro-electro-mechanical systems (MEMS) and Nano-electro-mechanical systems (NEMS), dimension of their parts is required to nanometer scale, and the characteristics of machined-surface of nano-scale parts affect strongly its application. Surface relaxation plays an important role to the characteristics of the machined-surface. In this paper, machined-surface of monocrystal copper used as the specimen of surface relaxation, and its surface relaxation process is simulated. The influences of surface relaxation on surface energy, atom array, surface roughness, surfaces hardness and surface residual stress of the monocrystal copper are analyzed. Results show that surface energy and surface hardness decrease due to relaxation; work-hardening can’t be completely eliminated by the relaxation; compression residual stress of the machined surface is changed gradually to tensile stress during the relaxation. These research results are very helpful to the application of nano-machined parts.

scholarly journals Origin of the Larger Values of Total Cross Section for Helium Scattering from Isolated Atomic Steps

2012 ◽  
Vol 60 (2) ◽  
pp. 271-275
Author(s):  
K.S. Sultana ◽  
W. Allison ◽  
M.Z. Hafiz
Keyword(s):  
Cross Section ◽  
Surface Relaxation ◽  
Surface Layers ◽  
Helium Atoms ◽  
Pair Potentials ◽  
Surface Electronic Structure ◽  
Large Step ◽  
Helium Scattering ◽  
Large Charge ◽  
Effect Of Surface

The effect of surface relaxation and the electronic re-arrangement in the vicinity of a step on the total step cross section for helium scattering is investigated. A realistic helium interaction potential at a Cu(001) step is modeled by summing non-spherical pair potentials which allows for the possibility of varying the smoothing across the surface due to the itinerant aspects of the surface electronic structure. Numerical calculations reveal a significant increase in the magnitude of the total step cross section with large charge re-arrangement in the vicinity of the step. Also, the relaxation of surface layers has no effect whatsoever. The present study clearly shows that the origin of the experimentally observed large step cross section is the hard wall scattering from charge re-arrangement in the proximity of the step. Further, the charge re-arrangements probed by thermal helium atoms must be greater than predicted by pairwise models.DOI: http://dx.doi.org/10.3329/dujs.v60i2.11532 Dhaka Univ. J. Sci. 60(2): 271-275, 2012 (July)

SOS Simulation of Sputtered Nanoripples

2003 ◽  
Vol 777 ◽  
Author(s):  
Maria Stepanova ◽  
Steven K. Dew
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Surface Morphology ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Systematic Investigation ◽  
Analytic Theory ◽  
Surface Relaxation ◽  
Sos Model ◽  
Effect Of Surface

AbstractWe report a Monte-Carlo simulation of nanostructures that self-organize on surfaces under oblique ion bombardment. We have developed a quantitative solid-on-solid (SOS) model that describes the surface morphology during ion bombardment and performed the first systematic investigation for Cu bombarded by 1000 eV Ar+ ions at 0°–80° incidence. When the angle of ion incidence exceeds ∼40°, we observe 2–5 nm wide ripples aligned parallel to the ion beam plane in agreement with existing analytic theory. We also detect ripples directed perpendicularly to the ion beam plane, but the conditions under which they arise disagree with the theory. We have investigated the effect of surface relaxation on the morphologies and found two different regimes of ripple evolution depending on the efficiency of relaxation. After ∼100 nm are removed, secondary 10–50 nm wide patterns are formed provided that relaxation is sufficiently high. We compare our simulations with those from other authors and with experiments.

X-Ray Topography Studies of Oxygen Precipitates in MCZ Silicon

1990 ◽  
Vol 209 ◽  
Author(s):  
Anthony J. Holland ◽  
G. Stephan Green ◽  
Brian K. Tanner ◽  
Mai Zhenhong
Keyword(s):  
Strain Field ◽  
Annealing Temperature ◽  
Surface Relaxation ◽  
Low Density ◽  
X Ray ◽  
Comparison With Experiment ◽  
Oxygen Precipitates ◽  
Section Topography ◽  
Defect Volume ◽  
Effect Of Surface

ABSTRACTX-ray section topography has been used to study the distribution and size of precipitates resulting from heat treatment of MCZ silicon. A low density of precipitates was found, enabling individual precipitate images to be studied. Images have been simulated by numerical solution of Takagi's equations and the magnitude of the strain field deduced by comparison with experiment. Excellent agreement has been found in the details of simulated and experimental images. The effective defect volume increased monotonically with annealing temperature. The effect of surface relaxation and long range curvature on the accuracy of determining the microscopic strain field by matching simulated and experimental images has been investigated.

Sign in / Sign up

Export Citation Format

Share Document