Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors

Pouya Hashemi; Meekyung Kim; John Hennessy; Leonardo Gomez; Dimitri A. Antoniadis; Judy L. Hoyt

doi:10.1063/1.3318249

Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors

Applied Physics Letters ◽

10.1063/1.3318249 ◽

2010 ◽

Vol 96 (6) ◽

pp. 063109 ◽

Cited By ~ 11

Author(s):

Pouya Hashemi ◽

Meekyung Kim ◽

John Hennessy ◽

Leonardo Gomez ◽

Dimitri A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Top Down

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Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack

Applied Physics Letters ◽

10.1063/1.4821546 ◽

2013 ◽

Vol 103 (12) ◽

pp. 122106 ◽

Cited By ~ 20

Author(s):

Keisuke Yamamoto ◽

Takahiro Sada ◽

Dong Wang ◽

Hiroshi Nakashima

Keyword(s):

Electric Field ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Metal Source

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Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1499213 ◽

2002 ◽

Vol 92 (7) ◽

pp. 3745-3751 ◽

Cited By ~ 145

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Limited Mobility ◽

Alloy Scattering

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Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

Applied Physics Letters ◽

10.1063/1.1423774 ◽

2001 ◽

Vol 79 (25) ◽

pp. 4246-4248 ◽

Cited By ~ 92

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

P Type

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Channel direction, effective field, and temperature dependencies of hole mobility in (110)-oriented Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistors fabricated by Ge condensation technique

Journal of Applied Physics ◽

10.1063/1.3537919 ◽

2011 ◽

Vol 109 (3) ◽

pp. 033709 ◽

Cited By ~ 46

Author(s):

Sanjeewa Dissanayake ◽

Yi Zhao ◽

S. Sugahara ◽

Mitsuru Takenaka ◽

Shinichi Takagi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Effective Field ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Hole-Mobility and Drive-Current Enhancement in Ge-Rich Strained Silicon–Germanium Wire Tri-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Nickel-Germanosilicide Metal Source and Drain

Applied Physics Express ◽

10.1143/apex.3.124201 ◽

2010 ◽

Vol 3 (12) ◽

pp. 124201 ◽

Cited By ~ 12

Author(s):

Keiji Ikeda ◽

Minoru Oda ◽

Yuuichi Kamimuta ◽

Yoshihiko Moriyama ◽

Tsutomu Tezuka

Keyword(s):

Metal Oxide ◽

Silicon Germanium ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Silicon ◽

Drive Current ◽

Metal Source

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Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3244205 ◽

2009 ◽

Vol 95 (14) ◽

pp. 142103 ◽

Cited By ~ 2

Author(s):

Chun-Jung Tang ◽

Tahui Wang ◽

Chih-Sheng Chang

Keyword(s):

Metal Oxide ◽

Quantum Confinement ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Quantum Confinement Effects ◽

Silicon And Germanium

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Strained Germanium–Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility

International Journal of Thermophysics ◽

10.1007/s10765-014-1785-z ◽

2014 ◽

Vol 36 (5-6) ◽

pp. 980-986 ◽

Cited By ~ 3

Author(s):

Yan Liu ◽

Jing Yan ◽

Hongjuan Wang ◽

Buwen Cheng ◽

Genquan Han

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Germanium Tin

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III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation

Applied Physics Letters ◽

10.1063/1.3638474 ◽

2011 ◽

Vol 99 (11) ◽

pp. 112113 ◽

Cited By ~ 30

Author(s):

J. J. Gu ◽

O. Koybasi ◽

Y. Q. Wu ◽

P. D. Ye

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Top Down ◽

Release Process ◽

Experiment And Simulation

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Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors

Thin Solid Films ◽

10.1016/j.tsf.2013.02.070 ◽

2013 ◽

Vol 544 ◽

pp. 487-490 ◽

Cited By ~ 2

Author(s):

S.-Y. Cheng ◽

M.H. Lee ◽

S.T. Chang ◽

C.-Y. Lin ◽

K.-T. Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Uniaxial Stress ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Effect ◽

Strained Sige

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Hole mobility in the ultra-thin-body junctionless germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.5086890 ◽

2019 ◽

Vol 114 (13) ◽

pp. 132101 ◽

Cited By ~ 2

Author(s):

Yukun Li ◽

Rui Zhang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Body

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