Atomic layer epitaxy and characterization of CdTe films grown on CdTe (110) substrates

1983 ◽  
Vol 54 (10) ◽  
pp. 6047-6050 ◽  
Author(s):  
M. Pessa ◽  
P. Huttunen ◽  
M. A. Herman
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Cdte Films

Atomic layer epitaxy and structural characterization of InP and InAs/InP heterostructures

1994 ◽  
Vol 75 (5) ◽  
pp. 2398-2405 ◽  
Author(s):  
C. A. Tran ◽  
R. A. Masut ◽  
J. L. Brebner ◽  
M. Jouanne
Keyword(s):  
Structural Characterization ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Cadmium Telluride Thin Films Grown By Atomic Layer Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
Arla Kytökivi ◽  
Yrjö Koskinen ◽  
Aimo Rautiainen ◽  
Jarmo Skarp
Keyword(s):  
Surface Roughness ◽  
Vapor Pressure ◽  
Flow Reactor ◽  
Substrate Surface ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Surface Development ◽  
High Vapor ◽  
Cdte Films ◽  
Cds Film

ABSTRACTPolycrystalline CdTe films up to 2 μm thick were grown by Atomic Layer Epitaxy (ALE) at 350–450°C. The growth was carried out in a lateral flow reactor, using the elements as source materials and 25 cm2 glass/ITO and glass/ITO/SnO2 as substrates. A growth of CdS film by ALE preceded the growth of CdTe.Profilometry, X-ray diffraction analysis and scanning electron microscopy were used to characterize the films.The relatively high vapor pressure of CdTe determined the upper limit of the processing window, while the small vapor pressure of Te2 set a practical lower limit of 390–400°C.The CdTe films were smooth up to 100–500 nm depending on the temperature and the substrate surface. Development of surface roughness was detected as the growth process proceeded. At the same time there was an increase of the effective surface area of the film, observed as a significant increase in the macroscopic growth rate. The greater surface roughness was also evident in the reduced degree of (111) orientation.The CdS/CdTe structure was investigated for its potential in solar cell applications.

Atomic layer epitaxy and characterization of InP and InAs/InP heterostructures

1994 ◽  
Vol 145 (1-4) ◽  
pp. 332-337 ◽  
Author(s):  
C.A. Tran ◽  
R.A. Masut ◽  
J.L. Brebner ◽  
M. Jouanne ◽  
L. Salamanca-Riba ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy

Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

2015 ◽  
Vol 589 ◽  
pp. 47-51 ◽  
Author(s):  
Neeraj Nepal ◽  
Virginia R. Anderson ◽  
Jennifer K. Hite ◽  
Charles R. Eddy
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

In situ optical characterization of GaAs and InP surfaces during chloride atomic layer epitaxy

1993 ◽  
Vol 225 (1-2) ◽  
pp. 47-52 ◽  
Author(s):  
Kenichi Nishi ◽  
Akira Usui ◽  
Hiroyuki Sakaki
Keyword(s):  
Atomic Layer ◽  
Optical Characterization ◽  
Atomic Layer Epitaxy

Growth and characterization of CdS epilayers on (100)GaAs by atomic layer epitaxy

1993 ◽  
Vol 130 (1-2) ◽  
pp. 29-36 ◽  
Author(s):  
Toyoyasu Tadokoro ◽  
Shin-ichi Ohta ◽  
Takashi Ishiguro ◽  
Yukio Ichinose ◽  
Satoshi Kobayashi ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy
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