Electrochemical Aspects and Structure Characterization of VA-VIA Compound Semiconductor Bi2Te3/Sb2Te3Superlattice Thin Films via Electrochemical Atomic Layer Epitaxy

Langmuir ◽  
2008 ◽  
Vol 24 (11) ◽  
pp. 5919-5924 ◽  
Author(s):  
Wen Zhu ◽  
Jun-You Yang ◽  
Dong-Xiang Zhou ◽  
Chen-Jin Xiao ◽  
Xin-Kai Duan
Keyword(s):  
Thin Films ◽  
Atomic Layer ◽  
Compound Semiconductor ◽  
Structure Characterization ◽  
Atomic Layer Epitaxy ◽  
Electrochemical Atomic Layer Epitaxy

Electrodeposition and characterization of Bi2Se3 thin films by electrochemical atomic layer epitaxy (ECALE)

2009 ◽  
Vol 54 (27) ◽  
pp. 6821-6826 ◽  
Author(s):  
Chengjing Xiao ◽  
Junyou Yang ◽  
Wen Zhu ◽  
Jiangying Peng ◽  
Jiansheng Zhang
Keyword(s):  
Thin Films ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Electrochemical Atomic Layer Epitaxy

Formation of In2Se3 thin films and nanostructures using electrochemical atomic layer epitaxy

2003 ◽  
Vol 559 ◽  
pp. 55-61 ◽  
Author(s):  
Raman Vaidyanathan ◽  
John L. Stickney ◽  
Stephen M. Cox ◽  
Steven P. Compton ◽  
Uwe Happek
Keyword(s):  
Thin Films ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Electrochemical Atomic Layer Epitaxy

Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

2015 ◽  
Vol 589 ◽  
pp. 47-51 ◽  
Author(s):  
Neeraj Nepal ◽  
Virginia R. Anderson ◽  
Jennifer K. Hite ◽  
Charles R. Eddy
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Electrodeposition of CU2SE thin films by Electrochemical Atomic Layer Epitaxy (EC-ALE).

2002 ◽  
Vol 744 ◽  
Author(s):  
Raman Vaidyanathan ◽  
Mkhulu K. Mathe ◽  
Patrick Sprinkle ◽  
Steve M Cox ◽  
Uwe Happek ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Atomic Layer Epitaxy ◽  
Cyclic Voltammograms ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrochemical Atomic Layer Epitaxy ◽  
Absorption Measurements

ABSTRACTElectrochemical atomic-layer epitaxy (EC-ALE) is an approach to electrodepositing thin-films of compound semiconductors. It takes advantage of underpotential deposition (UPD), deposition of a surface limited amount (a monolayer or less) of an element at a potential less negative than bulk deposition, to form a thin-film of a compound--one atomic layer at a time. Ideally, the 2-D growth mode should promote epitaxial deposition.We report the formation of compound Cu2Se, at room temperature by electrochemical atomic layer epitaxy (EC-ALE). Cyclic voltammograms were used to determine the deposition potentials of each element. An automated deposition program was used to form 750 cycles of Cu2Se thin films. Electron probe microanalysis was done to determine the stoichiometry of the thin films. X-ray diffraction of the 200 cycle deposit indicated the presence of polycrystalline Cu2Se. The atomic ratio of Cu/Se in the thin films was found to be 2. Band gap of the thin films were determined by reflection absorption measurements. The band gap of the 200 cycle Cu2Se films was found to be 1.6 eV. X-ray diffraction of 350 and 750 cycle Cu2Se films, indicated the deposits consisted of Cu3Se2 and Cu2Se.

Preparation of Size-Quantized ZnS Thin Films Using Electrochemical Atomic Layer Epitaxy and Their Photoelectrochemical Properties

Langmuir ◽  
2000 ◽  
Vol 16 (13) ◽  
pp. 5820-5824 ◽  
Author(s):  
Tsukasa Torimoto ◽  
Atsushi Obayashi ◽  
Susumu Kuwabata ◽  
Hidehiro Yasuda ◽  
Hirotaro Mori ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Photoelectrochemical Properties ◽  
Electrochemical Atomic Layer Epitaxy

Electrochemical atomic layer epitaxy of semiconductor CdTe thin films

1993 ◽  
Vol 51 ◽  
pp. 824-825
Author(s):  
Baoming M. Huang
Keyword(s):  
Thin Films ◽  
Gold Foil ◽  
Low Cost ◽  
Atomic Layer ◽  
Flow Cell ◽  
Cell System ◽  
Atomic Layer Epitaxy ◽  
Individual Element ◽  
Electrochemical Atomic Layer Epitaxy ◽  
Cdte Thin Films

Semiconductor thin films have important applications in areas such as photovoltaics and luminescent displays. Electrodeposition of these films is a potential low cost, room temperature production technique. Electrochemical atomic layer epitaxy (ECALE) involves alternatively depositing individual element monolayer amount per ECALE cycle, taking advantage of the under-potential deposition (UPD) phenomena.A series of CdTe thin films have been deposited using ECALE methodology in an electrochemical flow cell system. The 0.5 mM Te4+, Te blank, 5mM Cd2+, and Cd blank solutions are made with purasonic grade TeO2 and CdSO4, research grade electrolyte, and 18 M ohm water. The gold foil substrates are cleaned electrochemically before each experiment. An ECALE cycle starts with depositing monolayer amount Te, rinsing with Te blank, then depositing monolayer amount of Cd, and ending with rinsing with Cd blank solution. The whole flow cell system is controlled by a computer with house-written codes, and the deposition process can be fully programmed.

Compound Semiconductor Formation by Electrochemical Atomic Layer Epitaxy

2015 ◽  
pp. 1369-1400
Author(s):  
John L. Stickney ◽  
Kris Varazo ◽  
Lindell C. Ward ◽  
Marcus D. Lay ◽  
Thomas A. Sorenson
Keyword(s):  
Atomic Layer ◽  
Compound Semiconductor ◽  
Atomic Layer Epitaxy ◽  
Electrochemical Atomic Layer Epitaxy
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