Minority‐carrier lifetime in gold‐diffused silicon at high carrier concentrations

1982 ◽  
Vol 53 (9) ◽  
pp. 6250-6252 ◽  
Author(s):  
W. Schmid ◽  
J. Reiner
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
High Carrier

High Carrier Lifetime Bulk-Grown 4H-SiC Substrates for Power Applications

2006 ◽  
Vol 911 ◽  
Author(s):  
David Malta ◽  
J.R. Jenny ◽  
V.F. Tsvetkov ◽  
M. Das ◽  
St. G. Müller ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Deep Level ◽  
Minority Carrier Lifetime ◽  
Drift Region ◽  
Disordered Lattice ◽  
High Temperature Anneal ◽  
Decay Times ◽  
Photoconductivity Decay ◽  
High Carrier

AbstractA thermal anneal process has been developed that significantly enhances minority carrier lifetime (MCL) in bulk-grown substrates. Microwave photoconductivity decay (MPCD) measurements on bulk grown substrates subjected to this process have exhibited decay times in excess of 35 μs. Electron Beam Induced Current (EBIC) measurements indicated a minority carrier diffusion length (MCDL) of 65 μm resulting in a calculated MCL of 15 μs, well within the range of that measured by MPCD. Deep level transient spectroscopic (DLTS) analysis of samples subjected to this anneal process indicated that a significant reduction of deep level defects, particularly Z1/2, may account for the significantly enhanced lifetimes. The enhanced lifetime is coincident with a transformation of the original as-grown crystal into a strained or disordered lattice configuration as a result of the high temperature anneal process. PiN diodes were fabricated employing 350 μm thick bulk-grown substrates as the intrinsic drift region and thin p- and n-type epitaxial layers on either face of the substrate to act as the anode and cathode, respectively. Conductivity modulation was achieved in these diodes with a 10x effective carrier concentration increase over the background doping as extracted from the differential on-resistance. Significant stacking fault generation observed during forward operation served as additional evidence of conductivity modulation and underscores the importance of reducing dislocation densities in substrates in order to produce a viable bulk-grown drift layer.

Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC

2018 ◽  
Vol 924 ◽  
pp. 112-115 ◽  
Author(s):  
Jürgen Erlekampf ◽  
Daniel Kaminzky ◽  
Katharina Rosshirt ◽  
Birgit Kallinger ◽  
Mathias Rommel ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Growth Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Growth Parameters ◽  
Formation Enthalpy ◽  
Minority Carrier Lifetime ◽  
Process Conditions ◽  
Recombination Mechanism ◽  
High Carrier

The development of bipolar 4H-SiC devices for high blocking voltages requires the growth of high carrier lifetime epitaxial layers with low Z1/2 concentrations. This paper shows a comprehensive investigation of the influence of epitaxial growth parameters (C/Si ratio and growth temperature) on Z1/2 concentration and minority carrier lifetime. On the basis of a discovered exponential correlation of Z1/2 with the C/Si ratio and growth temperature, a competitive low Z1/2 concentration of 1.9∙1012 cm-3 could be achieved by lowering the growth temperature and switching to higher C/Si ratio. Thermodynamic considerations by an Arrhenius approach reveal a dependency of the formation enthalpy of Z1/2 on the thermal process and process conditions of the epitaxial growth. Furthermore, the correlation between Z1/2 and the effective minority carrier lifetime confirms the occurrence of a necessary second recombination mechanism beside the common recombination at deep levels by Shockley-Read-Hall for low Z1/2 concentration.

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission

scholarly journals Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Marked Enhancement
Sign in / Sign up

Export Citation Format

Share Document