Redistribution of implanted phosphorus after platinum silicide formation and the characteristics of Schottky barrier diodes

1982 ◽  
Vol 53 (5) ◽  
pp. 3690-3693 ◽  
Author(s):  
Akira Kikuchi ◽  
Shojiro Sugaki
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Silicide Formation ◽  
Platinum Silicide

Effects of processing conditions on the characteristics of platinum silicide Schottky barrier diodes

1988 ◽  
Vol 31 (5) ◽  
pp. 843-849 ◽  
Author(s):  
D. Moy ◽  
S. Basavaiah ◽  
C.T. Chuang ◽  
G.P. Li ◽  
E. Hackbarth ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Processing Conditions ◽  
Schottky Barrier Diodes ◽  
Platinum Silicide

Investigation of noise sources in platinum silicide Schottky barrier diodes

2002 ◽  
Vol 80 (8) ◽  
pp. 1468-1470 ◽  
Author(s):  
S. Papatzika ◽  
N. A. Hastas ◽  
C. T. Angelis ◽  
C. A. Dimitriadis ◽  
G. Kamarinos ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Noise Sources ◽  
Platinum Silicide

Gallium Oxide Schottky Barrier Diodes

2016 ◽  
Vol 136 (4) ◽  
pp. 479-483
Author(s):  
Masataka Higashiwaki ◽  
Kohei Sasaki ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akito Kuramata
Keyword(s):  
Schottky Barrier ◽  
Gallium Oxide ◽  
Schottky Barrier Diodes

Multi-aperture anode based AlGaN/GaN Schottky barrier diodes with low turn-on voltage and high uniformity

2020 ◽  
Vol 13 (9) ◽  
pp. 096502
Author(s):  
Yu Lu ◽  
Feng Zhou ◽  
Weizong Xu ◽  
Dongsheng Wang ◽  
Yuanyang Xia ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Turn On ◽  
High Uniformity
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