Plasma enhanced chemical vapor deposition of wear resistant gradual a-Si1−x:Cx:H coatings on nickel-titanium for biomedical applications

2010 ◽  
Vol 107 (5) ◽  
pp. 053301 ◽  
Author(s):  
Benedikt Niermann ◽  
Marc Böke ◽  
Janine-Christina Schauer ◽  
Jörg Winter
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Biomedical Applications ◽  
Chemical Vapor ◽  
Nickel Titanium ◽  
Wear Resistant

In Situ Growth of Carbon Nanotubes in Hydroxyapatite Matrix by Chemical Vapor Deposition

2009 ◽  
Vol 79-82 ◽  
pp. 1671-1674 ◽  
Author(s):  
Xiao Ying Lu ◽  
Hao Wang ◽  
Sheng Yi Xia ◽  
Jian Xin Wang ◽  
Jie Weng
Keyword(s):  
Mechanical Properties ◽  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Biomedical Applications ◽  
Chemical Vapor ◽  
Novel Method ◽  
Biomedical Fields ◽  
Walled Cnts

Carbon nanotubes (CNTs)/hydroxyapatite (HA) nanocomposites have been successfully fabricated by a novel method for the biomedical applications, which is in situ growing CNTs in HA matrix in a chemical vapor deposition (CVD) system. The results show that it is feasible to in situ grow CNTs in HA matrix by CVD for the fabrication of CNTs/HA nanocomposites. Multi-walled CNTs with 50-80 nm in diameter have been grown in situ from HA matrix with the pretreatment of sintering at 1473K in air. The nanocomposites are composed with carbon crystals in CNTs form, HA crystallites and calcium phosphate crystallites, one of most important CaP bioceramics. And the CNTs content is about 1% proportion by weight among the composites in our experiments, which can enhance the HA mechanical properties and the CNTs content does not affect the HA performances. These CNTs/HA nanocomposites have the potential application in the biomedical fields.

scholarly journals Low-friction, wear-resistant, and electrically homogeneous multilayer graphene grown by chemical vapor deposition on molybdenum

2020 ◽  
Vol 509 ◽  
pp. 144792
Author(s):  
Borislav Vasić ◽  
Uroš Ralević ◽  
Katarina Cvetanović Zobenica ◽  
Milče M. Smiljanić ◽  
Radoš Gajić ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Low Friction ◽  
Wear Resistant

Improve the Wear Resistant Life of the Sprag Clutch by Used the Chemical Vapor Deposition Technology

2011 ◽  
Vol 86 ◽  
pp. 260-262
Author(s):  
Yan Ying Jiang ◽  
Zhen Rong Yang ◽  
Kai Hong Shi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Adhesion Force ◽  
Low Cycle Fatigue ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Wear Resistant ◽  
Deposition Technology ◽  
Vapor Deposition Process

In order to improve the wear resistance of the sprag clutch under the work condition, the chemical vapor deposition technology is used on the surface of sprag. The hardness of surface is HV0.11700~2300, the thickness is 5~8μm, and the adhesion force isn’t less than 65N. In the end, the wear resistant life of the sprag surface used the chemical vapor deposition process is improved 5 times than that of the sprag surface used the physical vapor deposition process by the low cycle fatigue test. The life of the sprag clutch is effectively improved.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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