Interface structures during solid‐phase‐epitaxial growth in ion implanted semiconductors and a crystallization model

1982 ◽  
Vol 53 (12) ◽  
pp. 8607-8614 ◽  
Author(s):  
J. Narayan
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Interface Structures ◽  
Ion Implanted

Non-planar solid phase epitaxial growth processes in ion-implanted GaAs

1982 ◽  
Vol 93 (1-2) ◽  
pp. 179-184 ◽  
Author(s):  
J.S. Williams ◽  
F.M. Adams ◽  
K.G. Rossiter
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Growth Processes ◽  
Ion Implanted

Non-Planar Solid Phase Epitaxial Growth Processes in Ion-Implanted GaAs

1981 ◽  
Vol 10 ◽  
Author(s):  
J. S. Williams ◽  
F. M. Adams ◽  
K. G. Rossiter
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Surface Crystallization ◽  
Growth Interface ◽  
Near Surface ◽  
Epitaxial Regrowth ◽  
Reflection Electron Diffraction ◽  
Ion Implanted

High resolution ion channelling and reflection electron diffraction techniques have been used to examine details of epitaxial regrowth in Ar+-ion-implanted GaAs(100) at furnace anneal temperatures of 400°C or less. In particular, we have investigated the nature and extent of epitaxial regrowth during both isothermal and isochronal annealing for various implant energies and for implant doses above and below the amorphous threshold. Our results indicate the development of a nonplanar growth interface during annealing which may lead, ultimately, to complex near-surface crystallization processes. Consistently with our observations and recent results from other laboratories, we propose a model for the epitaxial regrowth of amorphous GaAs layers based upon non-uniform growth rates along the amorphous-crystalline interface which could arise from local stoichiometry imbalance.

scholarly journals Amorphization and Solid-Phase Epitaxial Growth of C-Cluster Ion-Implanted Si

2009 ◽  
Vol 38 (9) ◽  
pp. 1926-1930 ◽  
Author(s):  
N.G. Rudawski ◽  
L.R. Whidden ◽  
V. Craciun ◽  
K.S. Jones
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Cluster Ion ◽  
Ion Implanted

Amorphization and Solid Phase Epitaxial Growth in Ion Implanted III-V Compound Semiconductors

1993 ◽  
Vol 95-98 ◽  
pp. 989-994 ◽  
Author(s):  
M. Taniwaki ◽  
M. Yanaba ◽  
Toshimasa Yoshiie ◽  
Yasunori Hayashi
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Compound Semiconductors ◽  
Ion Implanted

Amorphization and solid‐phase epitaxial growth in tin‐ion‐implanted gallium arsenide

1990 ◽  
Vol 67 (9) ◽  
pp. 4036-4041 ◽  
Author(s):  
Masafumi Taniwaki ◽  
Hideto Koide ◽  
Naoto Yoshimoto ◽  
Toshimasa Yoshiie ◽  
Somei Ohnuki ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Ion Implanted
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