Preparation of (AlxGa1−x)yIn1−yAs (0≤x≤0.5,y=0.47) lattice matched to InP substrates by molecular beam epitaxy

1982 ◽  
Vol 53 (11) ◽  
pp. 7558-7560 ◽  
Author(s):  
Kazuya Masu ◽  
Tomoyoshi Mishima ◽  
Shin‐ichiro Hiroi ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inp Substrates ◽  
Lattice Matched

Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates

2008 ◽  
Vol 93 (4) ◽  
pp. 041913 ◽  
Author(s):  
Houssam Chouaib ◽  
Catherine Bru-Chevallier ◽  
Aleksandra Apostoluk ◽  
Wojciech Rudno-Rudzinski ◽  
Melania Lijadi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Fermi Level ◽  
Molecular Beam ◽  
Inp Substrates ◽  
Surface Fermi Level

Raman investigation of molecular beam epitaxy grown InGaAlAs epilayers lattice matched to InP for low Al concentrations

1998 ◽  
Vol 83 (4) ◽  
pp. 2266-2271 ◽  
Author(s):  
W. J. Keeler ◽  
G. A. Keeler ◽  
D. A. Harrison ◽  
Z. R. Wasilewski
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Matched

Epitaxial growth of lattice-matched InSb/CdTe heterostructures on the GaAs(111) substrate by molecular beam epitaxy

2020 ◽  
Vol 116 (12) ◽  
pp. 122102 ◽  
Author(s):  
Jiaming Li ◽  
Chenjia Tang ◽  
Peng Du ◽  
Yilan Jiang ◽  
Yong Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Lattice Matched
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