A microprobe technique for simultaneously measuring thermal conductivity and Seebeck coefficient of thin films

2010 ◽  
Vol 96 (6) ◽  
pp. 062107 ◽  
Author(s):  
Yanliang Zhang ◽  
Claudiu L. Hapenciuc ◽  
Eduardo E. Castillo ◽  
Theodorian Borca-Tasciuc ◽  
Rutvik J. Mehta ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Microprobe Technique

MeV Ion-Beam Bombardment Effects on The Thermoelectric Figures of Merit of Zn4Sb3 and ZrNiSn-Based half-heusler compounds

2007 ◽  
Vol 1020 ◽  
Author(s):  
S. Budak ◽  
S. Guner ◽  
C. Muntele ◽  
C. C. Smith ◽  
B. Zheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Measurement System ◽  
Ion Beam ◽  
Electrical Energy ◽  
Figures Of Merit ◽  
Material Systems ◽  
The Cross ◽  
Conductivity Of Thin Films

AbstractSemiconducting â-Zn4Sb3and ZrNiSn-based half-heusler compound thin films were prepared by co-evaporation for the application of thermoelectric (TE) materials. High-purity solid zinc and antimony were evaporated by electron beam to grow the â-Zn4Sb3thin film while high-purity zirconium powder and nickel tin powders were evaporated by electron beam to grow the ZrNiSn-based half-heusler compound thin film. Rutherford backscattering spectrometry (RBS) was used to analyze the composition of the thin films. The grown thin films were subjected to 5 MeV Si ions bombardments for generation of nanostructures in the films. We measured the thermal conductivity, Seebeck coefficient, and electrical conductivity of these two systems before and after 5 MeV Si ions beam bombardments. The two material systems have been identified as promising TE materials for the application of thermal-to-electrical energy conversion, but the efficiency still limits their applications. The electronic energy deposited due to ionization in the track of MeV ion beam can cause localized crystallization. The nanostructures produced by MeV ion beam can cause significant change in both the electrical and the thermal conductivity of thin films, thereby improving the efficiency. We used the 3ù-method measurement system to measure the cross-plane thermal conductivity ,the Van der Pauw measurement system to measure the cross-plane electrical conductivity, and the Seebeck-coefficient measurement system to measure the cross-plane Seebeck coefficient. The thermoelectric figures of merit of the two material systems were then derived by calculations using the measurement results. The MeV ion-beam bombardment was found to decrease the thermal conductivity of thin films and increase the efficiency of thermal-to-electrical energy conversion.

scholarly journals Effect of Grain Size and Film Thickness on the Thermoelectric Properties of Flexible Sb2Te3 Thin Films

2019 ◽  
Vol 2019 ◽  
pp. 1-7 ◽  
Author(s):  
Pornsiri Wanarattikan ◽  
Piya Jitthammapirom ◽  
Rachsak Sakdanuphab ◽  
Aparporn Sakulkalavek
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Grain Size ◽  
Film Thickness ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Flexible Substrate ◽  
Rf Magnetron Sputtering ◽  
Mean Free Path

In this work, stoichiometric Sb2Te3 thin films with various thicknesses were deposited on a flexible substrate using RF magnetron sputtering. The grain size and thickness effects on the thermoelectric properties, such as the Seebeck coefficient (S), electrical conductivity (σ), power factor (PF), and thermal conductivity (k), were investigated. The results show that the grain size was directly related to film thickness. As the film thickness increased, the grain size also increased. The Seebeck coefficient and electrical conductivity corresponded to the grain size of the films. The mean free path of carriers increases as the grain size increases, resulting in a decrease in the Seebeck coefficient and increase in electrical conductivity. Electrical conductivity strongly affects the temperature dependence of PF which results in the highest value of 7.5 × 10−4 W/m·K2 at 250°C for film thickness thicker than 1 µm. In the thermal conductivity mechanism, film thickness affects the dominance of phonons or carriers. For film thicknesses less than 1 µm, the behaviour of the phonons is dominant, while both are dominant for film thicknesses greater than 1 µm. Control of the grain size and film thickness is thus critical for controlling the performance of Sb2Te3 thin films.

Effects of MeV Si Ions Modification on the Thermoelectric Properties of SiO2/SiO2+Cu Multilayer Thin Films

2010 ◽  
Vol 1267 ◽  
Author(s):  
John Chacha ◽  
S. Budak ◽  
Cydale Smith ◽  
Marcus Pugh ◽  
Kudus Ogbara ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Ion Beam ◽  
Absolute Temperature ◽  
Conductivity Increase ◽  
Before And After ◽  
The Cross ◽  
Thermoelectric Thin Films

AbstractThe performance of the thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S2σT/K, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature and K is the thermal conductivity. ZT can be increased by increasing S, increasing σ, or decreasing K. We have prepared 100 alternating multi-nano layer of SiO2/SiO2+Cu superlattice films using the ion beam assisted deposition (IBAD). The 5 MeV Si ions bombardments have been performed at the different fluences using the AAMU Pelletron ion beam accelerator to make quantum clusters in the multi-layer superlattice thin films to decrease the cross plane thermal conductivity increase the cross plane Seebeck coefficient and cross plane electrical conductivity. To characterize the thermoelectric thin films before and after Si ion bombardments we have measured the cross-plane Seebeck coefficient, the cross-plane electrical conductivity, and the cross-plane thermal conductivity for different fluences.

Uni-Leg Thermoelectric Module Comprised by Coated Hybrid-Perovskite Thin Film

2019 ◽  
Author(s):  
Shrikant Saini ◽  
Ajay Kumar Baranwal ◽  
Tomohide Yabuki ◽  
Shuzi Hayase ◽  
Koji Miyazaki
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Flexible Electronics ◽  
Thermoelectric Module ◽  
Electrical Energy ◽  
Maximum Output ◽  
Thermoelectric Modules ◽  
Wet Process

Abstract Thermoelectric materials can convert thermal energy into electrical energy without any moving part which leads its path of application to the era of printed and flexible electronics. CsSnI3 perovskite can be a promising thermoelectric material for the next-generation energy conversion due to its intrinsic ultra-low thermal conductivity and large Seebeck coefficient but enhancement of electrical conductivity is still required. CsSnI3 can be prepared by wet process which can reduce the cost of flexible thermoelectric module. In this work, CsSnI3 thin films were fabricated by spin coating wet process. Thin films were structurally and chemically characterized using XRD and SEM. Thermoelectric properties such as electrical conductivity, Seebeck coefficient, and thermal conductivity were measured at 300 K. Uni-leg thermoelectric modules were fabricated on a glass substrate using CsSnI3 thin films. The maximum output is about 0.8 nW for 5 legs (25 mm × 3 mm × 600 nm) modules for the temperature difference of about 5°C. These results will open a new pathway to thermoelectric modules for flexible electronics in spite of low output power.

Thermoelectric Properties of YbBiPt and YBiPt Thin Films

2008 ◽  
Vol 1100 ◽  
Author(s):  
Sadik Guner ◽  
Satilmis Budak ◽  
Claudiu I Muntele ◽  
Daryush Ila
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Rutherford Backscattering Spectrometry ◽  
Conductivity Measurement ◽  
Electronic Energy ◽  
Before And After

AbstractMonolayer thin films of YbBiPt and YBiPt have been produced with 560 nm and 394 nm thick respectively in house and their thermoelectric properties were measured before and after MeV ion bombardment. The energy of the ions were selected such that the bombarding Si ions stop in the silicon substrate and deposit only electronic energy by ionization in the deposited thin film. The bombardment by 5.0 MeV Si ions at various fluences changed the homogeneity as well as reducing the internal stress in the films thus affecting the thermal, electrical and Seebeck coefficient of thin films. The stoichiometry of the thin films was determined using Rutherford Backscattering Spectrometry, the thickness has been measured using interferometry and the electrical conductivity was measured using Van der Pauw method. Thermal conductivity of the thin films was measured using an in-house built 3ω thermal conductivity measurement system. Using the measured Seebeck coefficient, thermal conductivity and electrical conductivity we calculated the figure of merit (ZT). We will report our findings of change in the measured figure of merit as a function of bombardment fluence.

Cross-Plane Thermoelectric Properties in Si/Ge Superlattices

2001 ◽  
Vol 691 ◽  
Author(s):  
Bao Yang ◽  
Jian L. Liu ◽  
Kang L. Wang ◽  
Gang Chen
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Molecular Beam ◽  
Temperature Sensors ◽  
Transmission Line Model ◽  
Voltage Oscillation ◽  
Plane Direction ◽  
The Cross

ABSTRACTIn this paper, a set of methods is developed to measure the Seebeck coefficient, electrical conductivity, and thermal conductivity in the cross-plane direction of thin films. The method employs microfabricated heaters, voltage and temperature sensors, and phase-lock amplifiers to determine the temperature and Seebeck voltage oscillation in the cross-plane direction of the samples, from which the thermal conductivity and Seebeck coefficient of thin films are determined simultaneously. The cross-plane electrical conductivity is also measured by a modified transmission line model. These methods are applied to Si/Ge superlattices grown by molecular beam epitaxy.

scholarly journals Effect of Surfactant Concentration Variation on the Thermoelectric Properties of Mesoporous ZnO

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Min-Hee Hong ◽  
Chang-Sun Park ◽  
Sangwoo Shin ◽  
Hyung Hee Cho ◽  
Won-Seon Seo ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Surfactant Concentration ◽  
Zinc Acetate Dihydrate ◽  
Zno Thin Films ◽  
Molar Ratio ◽  
Zno Films ◽  
Mesoporous Zno

The electrical and thermal conductivities and the Seebeck coefficient of mesoporous ZnO thin films were investigated to determine the change of their thermoelectric properties by controlling surfactant concentration in the mesoporous ZnO films, because the thermoelectric properties of mesoporous ZnO films can be influenced by the porosity of the mesoporous structures, which is primarily determined by surfactant concentration in the films. Mesoporous ZnO thin films were successfully synthesized by using sol-gel and evaporation-induced self-assembly processes. Zinc acetate dihydrate and Brij-76 were used as the starting material and pore structure-forming template, respectively. The porosity of mesoporous ZnO thin films increased from 29% to 40% with increasing surfactant molar ratio. Porosity can be easily altered by controlling the molar ratio of surfactant/precursor. The electrical and thermal conductivity and Seebeck coefficients showed a close correlation with the porosity of the films, indicating that the thermoelectric properties of thin films can be changed by altering their porosity. Mesoporous ZnO thin films with the highest porosity had the best thermoelectric properties (the lowest thermal conductivity and the highest Seebeck coefficient) of the films examined.

Growth of halide perovskites thin films for thermoelectric applications

MRS Advances ◽  
2019 ◽  
Vol 4 (30) ◽  
pp. 1719-1725 ◽  
Author(s):  
Shrikant Saini ◽  
Ajay Kumar Baranwal ◽  
Tomohide Yabuki ◽  
Shuzi Hayase ◽  
Koji Miyazaki
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Cost Effective ◽  
Thermoelectric Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Halide Perovskites

ABSTRACTThermoelectric materials can play an important role to develop a sustainable energy source for internet of things devices near room temperature. In this direction, it is important to have a thermoelectric material with high thermoelectric performance. Cesium tin triiodide (CsSnI3) single crystal perovskite has shown high value of Seebeck coefficient and ultra low thermal conductivity which are necessary conditions for high thermoelectric performance. Here, we report the thermoelectric response of CsSnI3 thin films. These films are prepared by cost effective wet spin coating process at different baking temperature. Films were characterized using X-ray diffraction and scanning electron microscopy. In our case, films baked at 130°C for 5 min have shown the best thermoelectric performance at room temperature with: Seebeck coefficient 115 μV/K and electrical conductivity 124 S/cm, thermal conductivity 0.36 W/m·K and figure of merit ZT of 0.137.

Unileg Thermoelectric Module Comprised by Coated Halide-Perovskite Thin Film

2020 ◽  
Vol 142 (7) ◽  
Author(s):  
Shrikant Saini ◽  
Ajay Kumar Baranwal ◽  
Tomohide Yabuki ◽  
Shuzi Hayase ◽  
Koji Miyazaki
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Room Temperature ◽  
Maximum Output Power ◽  
Thermoelectric Module ◽  
Direct Conversion ◽  
Maximum Output ◽  
X Ray Diffraction ◽  
X Ray

Abstract The direct conversion of thermal energy into electricity is possible by thermoelectric effect. CsSnI3 perovskite has shown a way with its intrinsic ultralow thermal conductivity and large Seebeck coefficient. In this work, CsSnI3 thin films were optimized. Thin films were structurally and chemically characterized using X-ray diffraction (XRD) and scanning electron microscope (SEM). Thermoelectric properties such as electrical conductivity, Seebeck coefficient, and thermal conductivity were measured near room temperature (300 K). CsSnI3 thin films unileg thermoelectric modules were fabricated on a glass substrate. The maximum output power is obtained about 0.8 nW for five legs (25 mm × 3 mm × 600 nm) modules for the temperature difference of about 5 °C.

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