Photovoltaic investigation of minority carrier lifetime in the heavily‐doped emitter layer of silicon junction solar cell

1982 ◽  
Vol 53 (1) ◽  
pp. 507-513 ◽  
Author(s):  
Ching‐Tao Ho
Keyword(s):  
Solar Cell ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Emitter Layer ◽  
Junction Solar Cell ◽  
Heavily Doped

Improvement of Minority Carrier Lifetime and Si Solar Cell Characteristics by Nitric Acid Oxidation Method

2014 ◽  
Vol 3 (7) ◽  
pp. Q137-Q141 ◽  
Author(s):  
Fumio Shibata ◽  
Daisuke Ishibashi ◽  
Shoji Ogawara ◽  
Taketoshi Matsumoto ◽  
Chang-Ho Kim ◽  
...  
Keyword(s):  
Solar Cell ◽  
Nitric Acid ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Acid Oxidation ◽  
Oxidation Method ◽  
Si Solar Cell ◽  
Nitric Acid Oxidation

scholarly journals Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation

2020 ◽  
Vol 2020 ◽  
pp. 1-8
Author(s):  
Meihua Fang ◽  
Tao Fei ◽  
Mengying Bai ◽  
Yipan Guo ◽  
Jingpeng Lv ◽  
...  
Keyword(s):  
Solar Cell ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Spectral Response ◽  
Minority Carrier Lifetime ◽  
Defect Concentration ◽  
Electrical Performance ◽  
Annealing Effects ◽  
Annealing Kinetic ◽  
Effects Of Radiation

Radiation-induced defects are responsible for solar cell degradation. The effects of radiation and annealing on the defects of a GaAs/Ge solar cell are modeled and analyzed in this paper. The electrical performance and spectral response of solar cells irradiated with 150 keV proton are examined. Then, thermal annealing was carried out at 120°C. We found that the proportion of defect recovery after annealing decreases with increasing irradiation fluence. The minority carrier lifetime increases with decreasing defect concentration, which means that the electrical performance of the solar cell is improved. We calculated the defect concentration and minority carrier lifetime with numerical simulation and modeled an improved annealing kinetic equation with experimental results.

Ebic/Tem Investigation of Defects in Solar Cell Silicon

1981 ◽  
Vol 5 ◽  
Author(s):  
Dieter G. Ast ◽  
Brian Cunningham ◽  
Horst Strunk
Keyword(s):  
Solar Cell ◽  
Chemical Composition ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Dislocation Network ◽  
Junction Depth ◽  
First Order ◽  
Chemical Impurities ◽  
Crystal Volume

ABSTRACTTwo examples are given of the application of EBIC and HVTEM to the study of defects in silicon.An hexagonal dislocation network in a coherent first order twin boundary in WEB silicon shows a three fold symmetry when imaged by EBIC. The observed variation of the minority carrier lifetime at the nodes is consistent with a model which assumes that jogs are particularly strong recombination sites at a dislocation.EBIC and STEM observations on unprocessed and processed EFG ribbon show that the phosphorus diffused junction depth is not uniform, and that a variety of chemical impurities precipitate out during processing. Two kinds of precipitates are found i) 10 nm or less in size, located at the dislocation nodes in sub-boundary like dislocation arrangements formed during processing and ii) large precipitates, the chemical composition of which has been partially identified. These large precipitates emit dense dislocations tangles into the adjacent crystal volume.

Studies on temperature and concentration dependent minority carrier lifetime in heavily doped InGaAsP

1994 ◽  
Vol 37 (7) ◽  
pp. 1455-1457 ◽  
Author(s):  
S.S. De ◽  
A.K. Ghosh ◽  
A.K. Hajra ◽  
J.C. Halder ◽  
M. Bera
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Heavily Doped

Minority-Carrier Lifetime in Heavily Doped GaAs:C

1992 ◽  
Author(s):  
A. P. Heberle ◽  
U. Strauss ◽  
W. W. Ruhle ◽  
K. H. Bachem ◽  
T. Lauterbach N. Haegel
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Heavily Doped
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