Density of states in amorphous silicon produced by microwave glow discharge

1982 ◽  
Vol 53 (1) ◽  
pp. 439-441 ◽  
Author(s):  
M. Aktik ◽  
J. F. Currie ◽  
A. Yelon
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Density Of States

Electronic Transport and the Density of States Distribution in a-(Si, Ge):H, F Alloys

1986 ◽  
Vol 70 ◽  
Author(s):  
S. Aljishi ◽  
Z E. Smith ◽  
D. Slobodin ◽  
J. Kolodzey ◽  
V. Chu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
Density Of States ◽  
Electronic Transport ◽  
Silicon Germanium ◽  
Drift Mobility ◽  
Electronic And Optical Properties ◽  
Reported Data ◽  
Amorphous Silicon Germanium

ABSTRACTThe electronic and optical properties of amorphous silicon-germanium alloys produced by d.c. and r.f. glow discharge are reported. Data on the sub-gap absorption, dark and photo conductivities, drift mobilities and drift mobility-lifetime products are used to propose a density of states model.

Toward the Elimination of Light-Induced Degradation of Amorphous Si by Fluorine Incorporation

1992 ◽  
Vol 258 ◽  
Author(s):  
X. Deng ◽  
E. Mytilineou ◽  
R. T. Young ◽  
S. R. Ovshinsky
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Density Of States ◽  
Deposition Temperature ◽  
Gas Mixture ◽  
Dangling Bonds ◽  
Material Stability ◽  
Saturated State ◽  
High Deposition Temperature ◽  
Amorphous Si

ABSTRACTWe report on evidence that fluorine, properly incorporated into a-Si, replaces weakly bonded hydrogen and improves the material stability under light soaking. Our fluorinated amorphous silicon (a-Si:H:F) is made by if glow discharge at high deposition temperatures up to 430 C from a gas mixture of SiH4 or Si2H6 and F2. These a-Si:H:F films show much lower density of states in the light soaking saturated state than device quality a-Si:H prepared in the same deposition system. It is evident from our results that fluorine incorporated into the network at such high deposition temperature makes for a new configuration which minimizes dangling bonds and other defects.

Synthesis and Characterization of Halogenated Amorphous Silicon via a Novel Glow Discharge Process

1998 ◽  
Vol 10 (1) ◽  
pp. 366-371 ◽  
Author(s):  
Oscar H. Giraldo ◽  
William S. Willis ◽  
Manuel Márquez ◽  
Steven L. Suib ◽  
Yuji Hayashi ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Synthesis And Characterization ◽  
Discharge Process

Optical switching in hydrogenated amorphous silicon–sulfur alloy prepared by glow discharge

2004 ◽  
Vol 345-346 ◽  
pp. 302-305 ◽  
Author(s):  
S. Al-Dallal ◽  
F.Z. Henari ◽  
S.M. Al-Alawi ◽  
S.R. Arekat ◽  
H. Manaa
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Optical Switching ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Determination of Density of Localized States in Amorphous Silicon Alloys From the Low Field Conductance of Thin N-I-N Diodes

1985 ◽  
Vol 49 ◽  
Author(s):  
Michael Shur ◽  
Michael Hack
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Bulk Density ◽  
Density Of States ◽  
Energy Gap ◽  
Localized States ◽  
New Technique ◽  
Silicon Alloys ◽  
Low Field ◽  
Density Of Localized States

AbstractWe describe a new technique to determine the bulk density of localized states in the energy gap of amorphous silicon alloys from the temperature dependence of the low field conductance of n-i-n diodes. This new technique allows us to determine the bulk density of states in the centre of a device, and is very straightforward, involving fewer assumptions than other established techniques. Varying the intrinsic layer thickness allows us to measure the,density of states within approximately 400 meV of midgap.We measured the temperature dependence of the low field conductance of an amorphous silicon alloy n-i-n diode with an intrinsic layer thjckness of 0.45 microns and deduced the density of localised states to be 3xlO16cm−3 eV−1 at approximately 0.5 eV below the bottom of the conduction band. We have also considered the high bias region (the space charge limited current regime) and proposed an interpolation formula which describes the current-voltage characteristics of these structures at all biases and agrees well with our computer simulation based on the solution of the complete system of transport equations.

Determination of Hydrogen Density of States in Amorphous Silicon Using Fractional Evolution Experiments

1997 ◽  
Vol 467 ◽  
Author(s):  
A. J. Franz ◽  
W. B. Jackson ◽  
J. L. Gland
Keyword(s):  
Amorphous Silicon ◽  
Density Of States ◽  
Silicon Film ◽  
Mean Field ◽  
Frequency Factor ◽  
Silicon Films ◽  
Hydrogen Density ◽  
Heating And Cooling ◽  
Novel Method

ABSTRACTHydrogen plays an important role in the electronic behavior, structure and stability of amorphous silicon films. Therefore, determination of the hydrogen density of states (DOS) and correlation of the hydrogen DOS with the electronic film properties are important research goals. We have developed a novel method for determination of hydrogen DOS in silicon films, based on fractional evolution experiments. Fractional evolution experiments are performed by subjecting a silicon film to a series of linear, alternating heating and cooling ramps, while monitoring the hydrogen evolution rate. The fractional evolution data can be analyzed using two complementary memods, the fixed frequency factor approach and Arrhenius analysis. Using a rigorous, mean-field evolution model, we demonstrate the applicability of the two approaches to obtaining the hydrogen DOS in silicon films. We further validate both methods by analyzing experimental fractional evolution data foran amorphous silicon carbide film. Both types of analysis yield a similar double peaked density of states for the a-Si:C:H:D film.

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