Quantum effect on modulational instability of laser radiation in a semiconductor plasma

2010 ◽  
Vol 107 (2) ◽  
pp. 023307 ◽  
Author(s):  
M. R. Amin
2019 ◽  
Vol 45 (12) ◽  
pp. 1223-1225
Author(s):  
N. N. Bogachev ◽  
N. G. Gusein-zade ◽  
I. V. Zhluktova ◽  
S. Yu. Kazantsev ◽  
V. A. Kamynin ◽  
...  

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
Sandhya Chaudhary ◽  
Nilesh Nimje ◽  
Nishchhal Yadav ◽  
S. Ghosh

Dispersion and absorption characteristics of electrokinetic wave in unmagnetised extrinsic semiconductor with streaming carriers are analytically investigated. By using quantum hydrodynamic model, a linear dispersion relation is derived for longitudinal electrokinetic wave in colloids laden semiconductor plasma under slow electrokinetic mode regime. Results indicate that quantum effect through Bohm potential significantly modifies the dispersion and absorption characteristics of electrokinetic wave spectrum. The outcome is hoped to add substantially to the present knowledge of wave spectrum of longitudinal electrokinetic wave in colloids laden quantum semiconductor plasma subjected to a dc electric field along the direction of wave propagation.


Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.


1986 ◽  
Vol 6 (2) ◽  
pp. 201-211 ◽  
Author(s):  
Keda Bao ◽  
Fusui Liu

1983 ◽  
Vol 44 (C2) ◽  
pp. C2-19-C2-25
Author(s):  
M. C. Gower ◽  
R. G. Caro

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